Technology computer aided design : simulation for VLSI MOSFET /
edited by Chandan Kumar Sarkar.
- 1 online resource (xv, 430 pages)
1. Introduction to technology computer aided design / Samar K. Saha -- 2. Basic semiconductor and Metal-Oxide-Semiconductor (MOS) physics / Swapnadip De -- 3. Review of numerical methods for Technology Computer Aided Design (TCAD) / Kalyan Koley -- 4. Device simulation using ISE-TCAD / N. Mohankumar -- 5. Device simulation using silvaco ATLAS tool / Angsuman Sarkar -- 6. Study of deep sub-micron VLSI MOSFETs through TCAD / Srabanti Pandit -- 7. MOSFET characterization for VLSI circuit simulation / Soumya Pandit -- 8. Process simulation of a MOSFET using TSUPREM-4 and medici / Atanu Kundu.
"MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and concepts involved with the TCAD simulation of MOSFET devices. The book describes basic concepts and background related to popular commercial TCAD software as well as recent technologies to improve device performance such as multiple gate MOSFET, FINFET, SOI devices, and high-k gate material devices"--
9781466512665 9781315216454 9781351823654
10.1201/9781315216454 doi
Integrated circuits--Very large scale integration--Computer-aided design.
Metal oxide semiconductor field-effect transistors--Computer-aided design.
TK7874.75 / .T43 2013
621.3950285 / T255
1. Introduction to technology computer aided design / Samar K. Saha -- 2. Basic semiconductor and Metal-Oxide-Semiconductor (MOS) physics / Swapnadip De -- 3. Review of numerical methods for Technology Computer Aided Design (TCAD) / Kalyan Koley -- 4. Device simulation using ISE-TCAD / N. Mohankumar -- 5. Device simulation using silvaco ATLAS tool / Angsuman Sarkar -- 6. Study of deep sub-micron VLSI MOSFETs through TCAD / Srabanti Pandit -- 7. MOSFET characterization for VLSI circuit simulation / Soumya Pandit -- 8. Process simulation of a MOSFET using TSUPREM-4 and medici / Atanu Kundu.
"MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and concepts involved with the TCAD simulation of MOSFET devices. The book describes basic concepts and background related to popular commercial TCAD software as well as recent technologies to improve device performance such as multiple gate MOSFET, FINFET, SOI devices, and high-k gate material devices"--
9781466512665 9781315216454 9781351823654
10.1201/9781315216454 doi
Integrated circuits--Very large scale integration--Computer-aided design.
Metal oxide semiconductor field-effect transistors--Computer-aided design.
TK7874.75 / .T43 2013
621.3950285 / T255