McCluskey, Matthew D.,

Dopants and defects in semiconductors / Matthew D. McCluskey, Washington State University, Pullman, Washington, USA, Eugene E. Haller, UC Berkeley and Lawrence Berkeley National Laboratory, Berkeley, California, USA. - Second edition. - 1 online resource (xxii, 350 pages)

Semiconductor basics -- Defect classifications -- Interfaces and devices -- Crystal growth and doping -- Electronic properties -- Vibrational properties -- Optical properties -- Thermal properties -- Electrical measurements -- Optical spectroscopy -- Particle-beam methods -- Microscopy and structural characterization.

"This revised edition continues to provide the most complete coverage of the fundamental knowledge of semiconductors, expanding on the latest technology and applications of semiconductors with a new chapter. In addition to inclusion of new chapter problems and worked examples, it delves into solid-state lighting (LEDs and laser diodes). It treats dopants and defects as a unified subject, offering a solid foundation for experimental methods and the theory of defects in semiconductors"--

9781315269085 9781351977968

10.1201/b21986 doi


Semiconductor doping.
Semiconductors--Defects.

TK7871.85 / .M27 2018

660.2977 / M128