Baliga, B. Jayant, 1948-

Gallium nitride and silicon carbide power devices [electronic resource] / B. Jayant Baliga. - Singapore : World Scientific Publishing Co. Pte Ltd., ©2017. - 1 online resource (592 p.) : ill.

Includes bibliographical references and index.

"During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies. This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities."--


System requirements: Adobe Acrobat Reader.
Mode of access: World Wide Web.

9789813109414




Power electronics.
Gallium nitride--Electric properties.
Silicon carbide--Electric properties.
Electronic books.

TK7881.15 / .B349 2017

621.31/7