Includes index.
Includes bibliographical references and index.
Part One -- CMP of dielectric and metal films
1. Chemical and physical mechanisms of dielectric chemical mechanical polishing (CMP)
2. Copper chemical mechanical planarization (Cu CMP) challenges in 22 nm back-end-of-line (BEOL) and beyond
3. Electrochemical techniques and their applications for CMP of metal films
4. Ultra-low-k materials and chemical mechanical planarization (CMP)
5. CMP processing of high mobility channel materials -- alternatives to Sis
6. Multiscale modeling of chemical mechanical planarization (CMP)
7. Polishing of SiC films
8. Chemical and physical mechanisms of CMP of gallium nitride
9. Abrasive-free and ultra-low abrasive chemical mechanical polishing (CMP) processes
10. Transient copper removal rate phenomena with implications for polishing mechanisms
11. Environmental aspects of planarization processes
Part Two -- Consumables and process control for improved CMP
12. Preparation and characterization of slurry for CMP
13. Chemical metrology methods for CMP quality
14. Diamond disc pad conditioning in chemical mechanical polishing
15. Characterization of surface processes during oxide CMP by in situ FTIR spectroscopy
16. Chemical mechanical polishing (CMP) removal rate uniformity and role of carrier parameters
17. Approaches to defect characterization, mitigation and reduction
18. Challenges and solutions for post-CMP cleaning at device and interconnect levels
19. Applications of chemical mechanical planarization (CMP) to More than Moore devices
20. CMP for phase change materials
21. CMP pads and their performance
22. Latest developments in the understanding of PVA brush related issues during post CMP (pCMP) cleaning
Advances in Chemical Mechanical Planarization (CMP) provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The technology has grown to encompass the removal and planarization of multiple metal and dielectric materials and layers both at the device and the metallization levels, using different tools and parameters, requiring improvements in the control of topography and defects. This important book offers a systematic review of fundamentals and advances in the area. Part One covers CMP of dielectric and metal films, with chapters focusing on the use of particular techniques and processes, and on CMP of particular various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. Part Two addresses consumables and process control for improved CMP, and includes chapters on the preparation and characterization of slurry, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes, and approaches for defection characterization, mitigation, and reduction.--
9780128218198 0128218193
GBC1J7403 bnb
020367501 Uk
Chemical mechanical planarization.
Semiconductors--Materials.
Planarisation chimicom�ecanique.
Semi-conducteurs--Mat�eriaux.
Chemical mechanical planarization.
Semiconductors--Materials.
TK7874.84
621.38152