Fundamentals of Nanoscaled Field Effect Transistors (Record no. 54637)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 03168nam a22005775i 4500 |
| 001 - CONTROL NUMBER | |
| control field | 978-1-4614-6822-6 |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20200421111655.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 130423s2013 xxu| s |||| 0|eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9781461468226 |
| -- | 978-1-4614-6822-6 |
| 082 04 - CLASSIFICATION NUMBER | |
| Call Number | 621.381 |
| 100 1# - AUTHOR NAME | |
| Author | Chaudhry, Amit. |
| 245 10 - TITLE STATEMENT | |
| Title | Fundamentals of Nanoscaled Field Effect Transistors |
| 300 ## - PHYSICAL DESCRIPTION | |
| Number of Pages | XIV, 201 p. 121 illus., 102 illus. in color. |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Remark 2 | Scaling of a MOS Transistor -- Nanoscale Effects- Gate Oxide Leakage Currents -- Nanoscale Effects- Inversion Layer Quantization -- Dielectrics for Nanoelectronics -- Germanium Technology -- Biaxial s-Si Technology -- Uniaxial s-Si Technology -- Alternate MOS Structures -- Graphene Technology. |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc | Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-(Sm(B technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book. In summary, this book: Covers the fundamental principles behind nanoelectronics/microelectronics Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale Provides some case studies to understand the issue mathematically Fundamentals of Nanoscaled Field Effect Transistors is an ideal book for researchers and undergraduate and graduate students in the field of microelectronics, nanoelectronics, and electronics. |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | http://dx.doi.org/10.1007/978-1-4614-6822-6 |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Koha item type | eBooks |
| 264 #1 - | |
| -- | New York, NY : |
| -- | Springer New York : |
| -- | Imprint: Springer, |
| -- | 2013. |
| 336 ## - | |
| -- | text |
| -- | txt |
| -- | rdacontent |
| 337 ## - | |
| -- | computer |
| -- | c |
| -- | rdamedia |
| 338 ## - | |
| -- | online resource |
| -- | cr |
| -- | rdacarrier |
| 347 ## - | |
| -- | text file |
| -- | |
| -- | rda |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Engineering. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Nanoscale science. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Nanoscience. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Nanostructures. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Electronic circuits. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Electronics. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Microelectronics. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Optical materials. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Electronic materials. |
| 650 14 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Engineering. |
| 650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Electronics and Microelectronics, Instrumentation. |
| 650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Electronic Circuits and Devices. |
| 650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Circuits and Systems. |
| 650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Nanoscale Science and Technology. |
| 650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Optical and Electronic Materials. |
| 912 ## - | |
| -- | ZDB-2-ENG |
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