Poly-SiGe for MEMS-above-CMOS Sensors (Record no. 56219)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 04136nam a22005775i 4500 |
| 001 - CONTROL NUMBER | |
| control field | 978-94-007-6799-7 |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20200421111853.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 130717s2014 ne | s |||| 0|eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9789400767997 |
| -- | 978-94-007-6799-7 |
| 082 04 - CLASSIFICATION NUMBER | |
| Call Number | 621.3815 |
| 100 1# - AUTHOR NAME | |
| Author | Gonzalez Ruiz, Pilar. |
| 245 10 - TITLE STATEMENT | |
| Title | Poly-SiGe for MEMS-above-CMOS Sensors |
| 300 ## - PHYSICAL DESCRIPTION | |
| Number of Pages | XVI, 199 p. |
| 490 1# - SERIES STATEMENT | |
| Series statement | Springer Series in Advanced Microelectronics, |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Remark 2 | Acknowledgements -- Abstract -- Symbols and Abbreviations -- Introduction -- Poly-SiGe As Piezoresistive Material -- Design of a Poly-SiGe Piezoresistive Pressure Sensor -- The Pressure Sensor Fabrication Process -- Sealing of Surface Micromachined Poly-SiGe Cavities -- Characterization of Poly-SiGe pressure sensors -- CMOS Integrated Poly-SiGe Piezoresistive Pressure Sensor -- Conclusions And Future Work -- Appendix A -- Appendix B -- Appendix C -- Appendix D. |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc | Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence of deposition conditions, germanium content and doping concentration on the electrical and piezoresistive properties of boron-doped poly-SiGe. The development of a CMOS-compatible process flow, with special attention to the sealing method, is also described. Piezoresistive pressure sensors with different areas and piezoresistor designs were fabricated and tested. Together with the piezoresistive pressure sensors, also functional capacitive pressure sensors were successfully fabricated on the same wafer, proving the versatility of poly-SiGe for MEMS sensor applications. Finally, a detailed analysis of the MEMS processing impact on the underlying CMOS circuit is also presented. |
| 700 1# - AUTHOR 2 | |
| Author 2 | De Meyer, Kristin. |
| 700 1# - AUTHOR 2 | |
| Author 2 | Witvrouw, Ann. |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | http://dx.doi.org/10.1007/978-94-007-6799-7 |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Koha item type | eBooks |
| 264 #1 - | |
| -- | Dordrecht : |
| -- | Springer Netherlands : |
| -- | Imprint: Springer, |
| -- | 2014. |
| 336 ## - | |
| -- | text |
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| -- | rdacontent |
| 337 ## - | |
| -- | computer |
| -- | c |
| -- | rdamedia |
| 338 ## - | |
| -- | online resource |
| -- | cr |
| -- | rdacarrier |
| 347 ## - | |
| -- | text file |
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| -- | rda |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Physics. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Electronic circuits. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Nanotechnology. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Optical materials. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Electronic materials. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Materials science. |
| 650 14 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Physics. |
| 650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Electronic Circuits and Devices. |
| 650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Circuits and Systems. |
| 650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Optical and Electronic Materials. |
| 650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Nanotechnology and Microengineering. |
| 650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Characterization and Evaluation of Materials. |
| 830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE | |
| -- | 1437-0387 ; |
| 912 ## - | |
| -- | ZDB-2-ENG |
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