Nanometer Variation-Tolerant SRAM (Record no. 56441)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 03093nam a22004575i 4500 |
| 001 - CONTROL NUMBER | |
| control field | 978-1-4614-1749-1 |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20200421112037.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 120928s2013 xxu| s |||| 0|eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9781461417491 |
| -- | 978-1-4614-1749-1 |
| 082 04 - CLASSIFICATION NUMBER | |
| Call Number | 621.3815 |
| 100 1# - AUTHOR NAME | |
| Author | Abu-Rahma, Mohamed H. |
| 245 10 - TITLE STATEMENT | |
| Title | Nanometer Variation-Tolerant SRAM |
| Sub Title | Circuits and Statistical Design for Yield / |
| 300 ## - PHYSICAL DESCRIPTION | |
| Number of Pages | XVI, 172 p. |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Remark 2 | Introduction -- Variability in Nanometer Technologies and Impact on SRAM -- Variarion-Tolerant SRAM Write and Read Assist Techniques -- Reducing SRAM Power using Fine-Grained Wordline Pulse Width Control -- A Methodology for Statistical Estimation of Read Access Yield in SRAMs -- Characterization of SRAM Sense Amplifier Input Offset for Yield Prediction. |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc | Variability is one of the most challenging obstacles for IC design in the nanometer regime. In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost, while achieving higher performance and density. With the drastic increase in memory densities, lower supply voltages, and higher variations, statistical simulation methodologies become imperative to estimate memory yield and optimize performance and power. This book is an invaluable reference on robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design. It combines state of the art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer technologies. Provides comprehensive review of state-of-the-art, variation-tolerant SRAM circuit techniques; Discusses Impact of device related process variations and how they affect circuit and system performance, from a design point of view; Helps designers optimize memory yield, with practical statistical design methodologies and yield estimation techniques. |
| 700 1# - AUTHOR 2 | |
| Author 2 | Anis, Mohab. |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | http://dx.doi.org/10.1007/978-1-4614-1749-1 |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Koha item type | eBooks |
| 264 #1 - | |
| -- | New York, NY : |
| -- | Springer New York : |
| -- | Imprint: Springer, |
| -- | 2013. |
| 336 ## - | |
| -- | text |
| -- | txt |
| -- | rdacontent |
| 337 ## - | |
| -- | computer |
| -- | c |
| -- | rdamedia |
| 338 ## - | |
| -- | online resource |
| -- | cr |
| -- | rdacarrier |
| 347 ## - | |
| -- | text file |
| -- | |
| -- | rda |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Engineering. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Computer-aided engineering. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Electronic circuits. |
| 650 14 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Engineering. |
| 650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Circuits and Systems. |
| 650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Computer-Aided Engineering (CAD, CAE) and Design. |
| 912 ## - | |
| -- | ZDB-2-ENG |
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