MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch (Record no. 58600)

000 -LEADER
fixed length control field 03250nam a22005055i 4500
001 - CONTROL NUMBER
control field 978-3-319-01165-3
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20200421112546.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 131007s2014 gw | s |||| 0|eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 9783319011653
-- 978-3-319-01165-3
082 04 - CLASSIFICATION NUMBER
Call Number 621.3815
100 1# - AUTHOR NAME
Author Srivastava, Viranjay M.
245 10 - TITLE STATEMENT
Title MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch
300 ## - PHYSICAL DESCRIPTION
Number of Pages XV, 199 p. 55 illus., 45 illus. in color.
490 1# - SERIES STATEMENT
Series statement Analog Circuits and Signal Processing,
505 0# - FORMATTED CONTENTS NOTE
Remark 2 Introduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope.
520 ## - SUMMARY, ETC.
Summary, etc This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET.  The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET  is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.  �         Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; �         Explains the design of RF switches using the technologies presented and simulates switches; �         Verifies parameters and discusses feasibility of devices and switches.
700 1# - AUTHOR 2
Author 2 Singh, Ghanshyam.
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier http://dx.doi.org/10.1007/978-3-319-01165-3
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type eBooks
264 #1 -
-- Cham :
-- Springer International Publishing :
-- Imprint: Springer,
-- 2014.
336 ## -
-- text
-- txt
-- rdacontent
337 ## -
-- computer
-- c
-- rdamedia
338 ## -
-- online resource
-- cr
-- rdacarrier
347 ## -
-- text file
-- PDF
-- rda
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Engineering.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Semiconductors.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Electrical engineering.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Electronic circuits.
650 14 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Engineering.
650 24 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Circuits and Systems.
650 24 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Communications Engineering, Networks.
650 24 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Semiconductors.
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
-- 1872-082X ;
912 ## -
-- ZDB-2-ENG

No items available.