Semiconductor material and device characterization / (Record no. 59366)

000 -LEADER
fixed length control field 06306nam a2201213 i 4500
001 - CONTROL NUMBER
control field 5237928
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20200421114112.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 151221s2006 njua ob 001 eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 9780471749097
-- electronic
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
-- print
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
-- electronic
082 04 - CLASSIFICATION NUMBER
Call Number 621.3815/2
100 1# - AUTHOR NAME
Author Schroder, Dieter K.,
245 10 - TITLE STATEMENT
Title Semiconductor material and device characterization /
250 ## - EDITION STATEMENT
Edition statement 3rd ed.
300 ## - PHYSICAL DESCRIPTION
Number of Pages 1 PDF (xv, 779 pages) :
505 0# - FORMATTED CONTENTS NOTE
Remark 2 Resistivity -- Carrier and doping density -- Contact resistance and Schottky barriers -- Series resistance, channel length and width, and threshold voltage -- Defects -- Oxide and interface trapped charges, oxide thickness -- Carrier lifetimes -- Mobility -- Charge-based and probe characterization -- Optical characterization -- Chemical and physical characterization -- Reliability and failure analysis.
520 ## - SUMMARY, ETC.
Summary, etc This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: . Updated and revised figures and examples reflecting the most current data and information. 260 new references offering access to the latest research and discussions in specialized topics. New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: . Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy.. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
General subdivision Testing.
856 42 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier http://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=5237928
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type eBooks
264 #1 -
-- [Piscataway, New Jersey] :
-- IEEE Press,
-- c2006.
264 #2 -
-- [Piscataqay, New Jersey] :
-- IEEE Xplore,
-- [2006]
336 ## -
-- text
-- rdacontent
337 ## -
-- electronic
-- isbdmedia
338 ## -
-- online resource
-- rdacarrier
588 ## -
-- Description based on PDF viewed 12/21/2015.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Semiconductors.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Semiconductors
695 ## -
-- Acceleration
695 ## -
-- Adaptive optics
695 ## -
-- Bismuth
695 ## -
-- Capacitance
695 ## -
-- Capacitance-voltage characteristics
695 ## -
-- Cathode ray tubes
695 ## -
-- Charge carrier density
695 ## -
-- Charge carrier processes
695 ## -
-- Charge measurement
695 ## -
-- Conductivity
695 ## -
-- Contact resistance
695 ## -
-- Contamination
695 ## -
-- Current measurement
695 ## -
-- Density measurement
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-- Doping
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-- Electric potential
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-- Electron beams
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-- Electron emission
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-- Electron traps
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-- Equations
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-- Hall effect
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-- Image resolution
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-- Impurities
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-- Indexes
695 ## -
-- Junctions
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-- Kelvin
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-- Lifetime estimation
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-- Logic gates
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-- Magnetic semiconductors
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-- Materials
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-- Metals
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-- Microscopy
695 ## -
-- Ohmic contacts
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-- Optical imaging
695 ## -
-- Optical microscopy
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-- Optical polarization
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-- Optical reflection
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-- Oxidation
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-- Photonic band gap
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-- Pollution measurement
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-- Probes
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-- Radiative recombination
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-- Reliability
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-- Resistance
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-- Scanning electron microscopy
695 ## -
-- Scattering
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-- Schottky diodes
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-- Semiconductor device measurement
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-- Silicon
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-- Stress
695 ## -
-- Surface treatment
695 ## -
-- Symbols
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-- Temperature measurement
695 ## -
-- Terminology
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-- Thermionic emission
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-- Threshold voltage
695 ## -
-- Transmission electron microscopy
695 ## -
-- Tunneling
695 ## -
-- Voltage measurement

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