Future trends in microelectronics : (Record no. 59905)

000 -LEADER
fixed length control field 10152nam a2202197 i 4500
001 - CONTROL NUMBER
control field 6558560
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20200421114528.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 151222s2013 njua ob 001 eng d
015 ## - NATIONAL BIBLIOGRAPHY NUMBER
-- GBA6A5950 (print)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 9781118678107
-- electronic
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
-- print
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
-- paper
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
-- paper
082 00 - CLASSIFICATION NUMBER
Call Number 621.381
245 10 - TITLE STATEMENT
Title Future trends in microelectronics :
Sub Title up the nano creek /
300 ## - PHYSICAL DESCRIPTION
Number of Pages 1 PDF (xiv, 459 pages) :
500 ## - GENERAL NOTE
Remark 1 "This book is a brainchild of the fifth workshop in the Future Trends in Microelectronics series (FTM-5) ... on Crete, Greece, in June of 2006"--Pref.
505 0# - FORMATTED CONTENTS NOTE
Remark 2 Preface ix / S. Luryi, J. M. Xu and A Zaslavsky -- I INNOVATIONS IN ELECTRONICS AND SYSTEMS 1 -- Technology Innovation, Reshaping the Microelectronics Industry 4 / K. Kim and U.-I. Chung -- Challenges and Limits for Very Low Energy Computation 49 / F. Balestra -- Getting Rid of the DRAM Capacitor 59 / N. Rodriguez, F. Gamiz and S. Cristoloveanu -- Physics and Design of Nanoscale Field Effect Diodes for Memory and ESD Protection Applications 73 / D. E. Ioannou, Z. Chbili, A. Z. Badwan, Q. Li, Y. Yang and A. A. Salman -- Sharp-Switching CMOS-Compatible Devices with High Current Drive 81 / J. Wan, S. Cristoloveanu, S. T. Le, A. Zaslavsky, C. Le Royer, S. A. Dayeh, D. E. Perea and S. T. Picraux -- Magnetic Tunnel Junctions with a Composite Free layer: A New Concept for Future Universal memory 93 / A. Makarov, V. Sverdlov and S. Selberherr -- Silicon Carbide High Temperature Electronics - Is This Rocket Science? 102 / C. -M. Zetterling -- Microchip Post-Processing: There is Plenty of Room at the Top 110 / J. Schmitz -- EUV Lithography: Today and Tomorrow 120 / V. Y. Banine -- Manufacturability and Nanoelectronic Performance 133 / M. J. Kelly -- II OPTOELECTRONICS IN THE NANO AGE 139 -- Ultrafast Nanophotonic Devices For Optical Interconnects 142 / N. N. Ledentsov, V. A. Shchukin and J. A. Lott -- Will Optical Communications Meet the Challenges of the Future? 160 / D. K. Mynbaev -- Optical Antennae for Optoelectronics: Impacts, Promises, and Limitations 173 / H. Mohseni -- Spin Modulation: Teaching Lasers New Tricks 183 / J. Lee, G. Bo�eris, R. Oszwaldowski, K. V�yborn�y, C. G�thgen and I ?utić -- Silicon Photovoltaics: Accelerating to Grid Parity 194 / M. R. Pinto -- Two- and Three-Dimensional Numerical Simulation of Advanced Silicon Solar Cells 210 / E. Sangiorgi, M. Zanuccoli, R. De Rose, P. Magnone and C. Fiegna -- Mechanical Energy harvesting with Piezoelectric Nanostructures: Great Expectations for Autonomous Systems 230 / G. Ardila, R. Hinchet, L. Mont�es and M. Mouis.
505 8# - FORMATTED CONTENTS NOTE
Remark 2 Charged Quantum Dots for Photovoltaic Conversion and IR Sensing 244 / A. Sergeev, V. Mitin, N. Vagidov and K. Sablon -- Active Optomecjanical Resonators 254 / D. Princepe, L. Barea, G. O. Luiz, G. Wiederhecker and N. C. Frateschi -- IV PHYSICS FRONTIERS 263 -- State of the Art and Prospects for Quantum Computing 266 / M. I. Dyakonov -- Wireless, Implantable Neuroprosthesis: Applying Advanced Technology to Untether the Mind 286 / D. A. Borton and A. V. Nurmikko -- Correlated Electrons: A Platform for Solid State Devices 300 / S. D. Ha, Y. Zhou, R. Jaramillo and S. Ramanathan -- Graphene-Based Integrated Electronic, Photonic and Spintronic Circuit 308 / A. D. GŠu�clŠu, P. Potasz and P. Hawrylak -- Luttinger Liquid Behavior of Long GaAs Quantum Wires 319 / E. Levy, I. Sternfeld, M. Eshkol, M. Karpovski, A. Palevski, B. Dwir, A. Rudra, E. Kapon and Y. Oreg -- Toward Spin Electronic Devices Based on Semiconductor Nanowires 328 / S. Heedt, I. Wehrmann, K. Weis, H. Hardtdegen, D. GrŠutzmacher, Th. Sch�apers, C. Morgan, D. E. BŠurgler and R. Calarco -- An Alternative Path for the Fabrication of Self-Assembled III-Nitride Nanowires 340 / A. Haab, M. Mikulics, T. Stoica, B. Kardynal, A. Winden, H. Hardtdegen, D. GrŠutzmacher and E. Sutter -- InAs Nanowires with Surface States as Building Blocks for Tube-Like Electrical Sensing Transitors 351 / N. V. Demarina, M. I. Lepsa and D. GrŠutzmacher -- L�evy Flight of Photoexcited Minority Carriers in Moderately Doped Semiconductors: Theory and Observation 359 / A. Subashiev and S. Luryi -- Terahertz Plasma Oscillations in Field Effect transistors: Main Ideas and Experimental Facts 373 / W. Knap and M. I. Dyakonov -- INDEX 395.
700 1# - AUTHOR 2
Author 2 Luryi, Serge.
700 1# - AUTHOR 2
Author 2 Xu, Jimmy.
700 1# - AUTHOR 2
Author 2 Zaslavsky, Alex,
856 42 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier http://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=6558560
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type eBooks
264 #1 -
-- Hoboken, New Jersey :
-- Wiley-Interscience,
-- c2007.
264 #2 -
-- [Piscataqay, New Jersey] :
-- IEEE Xplore,
-- [2013]
336 ## -
-- text
-- rdacontent
337 ## -
-- electronic
-- isbdmedia
338 ## -
-- online resource
-- rdacarrier
588 ## -
-- Description based on PDF viewed 12/22/2015.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Nanotechnology
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Microelectronics
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-- Absorption
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-- Acceleration
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-- Anodes
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-- Apertures
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-- Arrays
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-- Bandwidth
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-- Boundary conditions
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-- CMOS integrated circuits
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-- CMOS technology
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-- Capacitors
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-- Cathodes
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-- Cavity resonators
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-- Charge carrier processes
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-- Computer architecture
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-- Computers
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-- Conductivity
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-- Couplings
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-- Crystals
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-- Doping
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-- Electric potential
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-- Electricity
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-- Electron mobility
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-- Electrostatic discharges
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-- Elementary particle vacuum
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-- Epitaxial growth
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-- Equations
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-- Error correction
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-- Etching
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-- Fabrication
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-- Field effect transistors
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-- Fingers
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-- Gallium arsenide
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-- Gallium nitride
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-- Gold
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-- Graphene
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-- Heterojunction bipolar transistors
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-- History
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-- Impedance
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-- Indexes
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-- Information processing
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-- Integrated circuits
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-- Interference
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-- Junctions
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-- Lattices
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-- Liquids
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-- Lithography
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-- Logic gates
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-- MOSFET
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-- Magnetic tunneling
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-- Magnetization
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-- Magnetoelectronics
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-- Manufacturing
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-- Market research
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-- Mechanical energy
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-- Metallization
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-- Metals
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-- Microelectrodes
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-- Microelectronics
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-- Microprocessors
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-- Nanoscale devices
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-- Nanostructures
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-- Nanowires
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-- Neurons
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-- Neurophysiology
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-- Noise
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-- Numerical models
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-- Numerical simulation
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-- Optical amplifiers
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-- Optical coupling
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-- Optical fiber networks
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-- Optical fibers
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-- Optical interconnections
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-- Optical modulation
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-- Optical polarization
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-- Optical pulses
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-- Optical receivers
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-- Optical reflection
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-- Optical refraction
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-- Optical resonators
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-- Optical surface waves
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-- Optical variables control
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-- Oscillators
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-- Performance evaluation
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-- Photonic band gap
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-- Photonics
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-- Photovoltaic cells
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-- Photovoltaic systems
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-- Physics
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-- Piezoelectric materials
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-- Plasma temperature
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-- Plasma waves
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-- Plasmas
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-- Probes
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-- Proposals
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-- Quantization (signal)
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-- Quantum computing
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-- Quantum dots
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-- Quantum mechanics
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-- Radiative recombination
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-- Random access memory
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-- Resistance
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-- Resists
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-- Resonant frequency
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-- Semiconductor device measurement
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-- Semiconductor diodes
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-- Semiconductor process modeling
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-- Sensors
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-- Silicon
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-- Silicon carbide
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-- Single electron transistors
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-- Steady-state
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-- Stimulated emission
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-- Strain
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-- Surface treatment
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-- Surface waves
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-- Switches
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-- Technological innovation
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-- Temperature dependence
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-- Temperature sensors
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-- Thermal factors
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-- Thermal stability
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-- Threshold voltage
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-- Thyristors
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-- Torque
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-- Transistors
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-- Transmitters
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-- Tunneling
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-- Ultrafast optics
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-- Ultraviolet sources
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-- Venus
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-- Vertical cavity surface emitting lasers
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-- Wires
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-- Writing
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-- Xenon

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