Growing Graphene on Semiconductors / (Record no. 70543)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 03001cam a2200385Ii 4500 |
| 001 - CONTROL NUMBER | |
| control field | 9781315186153 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 180706t20172017si a ob 001 0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9781315186153 |
| -- | (e-book : PDF) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9781351736237 |
| -- | (e-book: Mobi) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| -- | (hardback) |
| 082 04 - CLASSIFICATION NUMBER | |
| Call Number | 620.115 |
| -- | G884 |
| 245 00 - TITLE STATEMENT | |
| Title | Growing Graphene on Semiconductors / |
| 250 ## - EDITION STATEMENT | |
| Edition statement | First edition. |
| 300 ## - PHYSICAL DESCRIPTION | |
| Number of Pages | 1 online resource (x, 218 pages) |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Remark 2 | chapter 1 The Significance and Challenges of Direct Growth of Graphene on Semiconductor Surfaces -- chapter 2 Graphene Synthesized on Cubic-SiC(001) in Ultrahigh Vacuum: Atomic and Electronic Structure and Transport Properties -- chapter 3 Graphene Growth via Thermal Decomposition on Cubic SiC(111)/Si(111 -- chapter 4 Diffusion and Kinetics in Epitaxial Graphene Growth on SiC -- chapter 5 Atomic Intercalation at the SiC-Graphene Interface -- chapter 6 Epitaxial Graphene on SiC: 2D Sheets, Selective Growth, and Nanoribbons. |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc | "Graphene, the wonder material of the 21st century, is expected to play an important role in future nanoelectronic applications, but the only way to achieve this goal is to grow graphene directly on a semiconductor, integrating it in the chain for the production of electronic circuits and devices. This book summarizes the latest achievements in this field, with particular attention to the graphitization of SiC. Through high-temperature annealing in a controlled environment, it is possible to decompose the topmost SiC layers, obtaining quasi-ideal graphene by Si sublimation with record electronic mobilities, while selective growth on patterned structures makes possible the opening of a gap by Quantum confinement.The book starts with a review chapter on the significance and challenges of graphene growth on semiconductors, followed by three chapters dedicated to an up-to-date analysis of the synthesis of graphene in ultrahigh vacuum, and concludes with two chapters discussing possible ways of tailoring the electronic band structure of epitaxial graphene by atomic intercalation and of creating a gap by the growth of templated graphene nanostructures."--Provided by publisher. |
| 700 1# - AUTHOR 2 | |
| Author 2 | Coletti, Camilla, |
| 700 1# - AUTHOR 2 | |
| Author 2 | Iacopi, Francesca, |
| 700 1# - AUTHOR 2 | |
| Author 2 | Motta, Nunzio, |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | https://www.taylorfrancis.com/books/9781315186153 |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Koha item type | eBooks |
| 264 #1 - | |
| -- | Singapore : |
| -- | Pan Stanford Publishing, |
| -- | [2017] |
| 264 #4 - | |
| -- | ©2017 |
| 336 ## - | |
| -- | text |
| -- | rdacontent |
| 337 ## - | |
| -- | computer |
| -- | rdamedia |
| 338 ## - | |
| -- | online resource |
| -- | rdacarrier |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Graphene. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Graphitization. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Semiconductors. |
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