Stress and strain engineering at nanoscale in semiconductor devices / (Record no. 71315)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 03399cam a2200553Ki 4500 |
| 001 - CONTROL NUMBER | |
| control field | 9781003055723 |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20220711212444.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 210515s2021 flua ob 0|1 0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9781000404937 |
| -- | electronic book |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 1000404935 |
| -- | electronic book |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9781003055723 |
| -- | electronic book |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 1003055729 |
| -- | electronic book |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9781000404951 |
| -- | electronic book |
| -- | EPUB |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 1000404951 |
| -- | electronic book |
| -- | EPUB |
| 082 04 - CLASSIFICATION NUMBER | |
| Call Number | 620.1/123 |
| 100 1# - AUTHOR NAME | |
| Author | Maiti, C. K., |
| 245 10 - TITLE STATEMENT | |
| Title | Stress and strain engineering at nanoscale in semiconductor devices / |
| 300 ## - PHYSICAL DESCRIPTION | |
| Number of Pages | 1 online resource |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc | Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices. |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | https://www.taylorfrancis.com/books/9781003055723 |
| 856 42 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | http://www.oclc.org/content/dam/oclc/forms/terms/vbrl-201703.pdf |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Koha item type | eBooks |
| 264 #1 - | |
| -- | Boca Raton, FL : |
| -- | CRC PRESS, |
| -- | 2021. |
| 336 ## - | |
| -- | text |
| -- | txt |
| -- | rdacontent |
| 337 ## - | |
| -- | computer |
| -- | c |
| -- | rdamedia |
| 338 ## - | |
| -- | online resource |
| -- | cr |
| -- | rdacarrier |
| 588 ## - | |
| -- | OCLC-licensed vendor bibliographic record. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Strains and stresses. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Semiconductors. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Nanoelectronics. |
| 650 #7 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | SCIENCE / Physics |
| 650 #7 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | TECHNOLOGY / Electricity |
| 650 #7 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | TECHNOLOGY / Electronics / Circuits / General |
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