Gallium nitride power devices / (Record no. 72241)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 03132cam a2200313Ii 4500 |
| 001 - CONTROL NUMBER | |
| control field | 9781315196626 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 180706s2017 si a o b 001 0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9781315196626 |
| -- | (e-book : PDF) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9781351767590 |
| -- | (e-book: Mobi) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| -- | (hardback) |
| 082 04 - CLASSIFICATION NUMBER | |
| Call Number | 621.317 |
| -- | G171 |
| 245 00 - TITLE STATEMENT | |
| Title | Gallium nitride power devices / |
| 300 ## - PHYSICAL DESCRIPTION | |
| Number of Pages | 1 online resource (x, 298 pages) |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Remark 2 | chapter 1 The Growth Technology of High-Voltage GaN on Silicon -- chapter 2 The Characteristics of Polarization Effects in GaN Heterostructures -- chapter 3 GaN Transistor Fabrication Process -- chapter 4 Conventional AlGaN/GaN Heterojunction Field-Effect Transistors -- chapter 5 Original Demonstration of Depletion-Mode and Enhancement-Mode AlGaN/GaN Heterojunction Field-Effect Transistors -- chapter 6 Surface Passivation and GaN MIS-HEMTs -- chapter 7 GaN Vertical Power Devices -- chapter 8 Reliability of GaN HEMT Devices -- chapter 9 The Packaging Technologies for GaN HEMTs. |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc | "GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China.This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China."--Provided by publisher. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| General subdivision | Electric properties. |
| 700 1# - AUTHOR 2 | |
| Author 2 | Duan, Tianli, |
| 700 1# - AUTHOR 2 | |
| Author 2 | Yu, Hongyu, |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | https://www.taylorfrancis.com/books/9781315196626 |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Koha item type | eBooks |
| 264 #1 - | |
| -- | Singapore : |
| -- | Pan Stanford Publishing, |
| -- | 2017. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Power electronics. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Gallium nitride |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Semiconductors. |
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