Future trends in microelectronics : (Record no. 74086)

000 -LEADER
fixed length control field 12872nam a2202521 i 4500
001 - CONTROL NUMBER
control field 5599322
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20220712205744.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 151221s2010 njua ob 001 eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 9780470649336
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 047064933X
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 9780470649343
-- electronic
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
-- print
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
-- electronic
245 00 - TITLE STATEMENT
Title Future trends in microelectronics :
Sub Title from nanophotonics to sensors and energy /
300 ## - PHYSICAL DESCRIPTION
Number of Pages 1 PDF (xiii, 431 pages) :
505 0# - FORMATTED CONTENTS NOTE
Remark 2 Preface (S. Luryi, J. M. Xu, and A. Zaslavsky) -- 1 OPTOELECTRONICS AND NANOPHOTONICS -- Nanophotonics for Information Systems (Y. Fainman) -- What Will Modern Photonics Contribute to the Development of Future Optical Communication Technology? (Djafar K. Mynbaev) -- Ultrafast Nanophotonic Devices For Optical Interconnects (N. N. Ledentsov) -- Intersubband Quantum-Box Lasers: Progress and Potential as Uncooled Mid-Infrared Sources (D. Botez, G. Tsvid, M. D'Souza, J. C. Shin, Z. Liu, J. H. Park, J. Kirch, L. J. Mawst, M. Rathi, T. F. Kuech, I. Vurgaftman, J. Meyer, J. Plant, G. Turner, and P. Zory) -- GaSb-based Type-I Laser Diodes Operating at 3 �m and Beyond (L. Shterengas, G. Kipshidze, T. Hosoda, and G. Belenky) -- Bridging Optics and Electronics with Quantum Cascade Lasers, Antennas, and Circuits (J. Faist, C. Walther, M. Amanti, G. Scalari, M. Fischer, and M. Beck) -- Towards Intersubband Polaritonics: How Fast Can Light and Electrons Mate? (A. A. Anappara, L. Sorba, A. Tredicucci, G. G�nter, A. Sell, A. Leitenstorfer, R. Huber, S. De Liberato, C. Ciuti, and G. Biasiol) -- Si3N4/SiO2 Planar Photonic Structures Fabricated by Focused Ion Beam (L. A. M. Barea, F. Vallini, D. L. S. Figueira, A. Da Silva Filho, N. C. Frateschi, and A. R. Vaz) -- 2 ELECTRONIC DEVICES AND SYSTEMS -- Silicon-Based Devices and Materials for Nanoscale CMOS and Beyond-CMOS (F. Balestra) -- Device Proposals Beyond Silicon CMOS (P. M. Solomon) -- GeOI as a Platform for Ultimate Devices (W. Van Den Daele, S. Cristoloveanu, E. Augendre, C. Le Royer, J.-F. Damlencourt, D. Kazazis, and A. Zaslavsky) -- Simulation of Self-Heating Effects in Different SOI MOS Architectures (Enrico Sangiorgi, Marco Braccioli and Claudio Fiegna) -- Nanowires: Technology, Physics and Perspectives (D. Gr�tzmacher, Th. Sch�pers, S. Mantl, S. Feste, Q. T. Zhao, H. Hardtdegen, R. Calarco, M. Lepsa, and N. Demarina) -- Emerging Nanotechnology for Integration of Nanostructures in Nanoelectronic Devices (T. Baron, C. Agraffeil, F. Dhalluin, M. Kogelschtaz, G. Cunge, T. Chevolleau, B. Salem, B. Salhi, H. Abed, A. Poti�, L. Latu-Romain, C. Ternon, K. Aissou, L. Mont�s, Mur, G. Molas, B. De Salvo, E. Jalaguier, T. Ernst, P. Ferret, P. Gentile, and N. Pauc).
505 8# - FORMATTED CONTENTS NOTE
Remark 2 Scrolled Si/SiGe Heterostructures as Building Blocks for Tube-Like Field-Effect Transistors (N. V. Demarina and D. Gr�tzmacher) -- Silicon Nanowire-Based Nonvolatile Memory Cells: Progress and Prospects (Qiliang Li, X. Zhu, Y. Yang, D. E. Ioannou, J. S. Suehle, and C. A. Richter) -- Prospects and Challenges of Next-Generation Flash Memory Devices (Jang-Sik Lee) -- Chalcogenide Glassy Semiconductors - Could They Replace Silicon in Memory Devices? (K. D. Tsendin) -- Current Status and Recent Developments in RSFQ Processor Design (M. Dorojevets) -- 1/f Noise: The Funeral is Cancelled (or Postponed) (M. E. Levinshtein and S. L. Rumyantsev) -- 3 PHYSICS, BIOLOGY, AND OTHER SISTER SCIENCES -- Spin Hall Effect (M. I. Dyakonov) -- Can Biology Provide Creative Solutions for Next-Generation Memory Devices? (W. E. van den Berg and S. A. Kushner) -- Spin Screening of Magnetization Due to Inverse Proximity Effect in Superconducting/Ferromagnetic Bilayers (V. Shelukhin, M. Karpovski, A. Palevski, J. Xia, A. Kapitulnik, and A. Tsukernik) -- Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting (V. Sverdlov, O. Baumgartner, T. Windbacher, and S. Selberherr) -- Graphene-Based Terahertz Devices: Concepts and Characteristics (V. Ryzhii, M. Ryzhii, A. Satou, N. Ryabova, T. Otsuji, V. Mitin, F. T. Vasko, A. A. Dubinov, V. Y. Aleshkin, and M. S. Shur) -- Directed Self-Assembly - A Controllable Route to Optical and Electronic Devices Based on Single Nanostructures (R. L. Williams, D. Dalacu, M. E. Reimer, K. Mnaymneh, V. Sazonova, P. J. Poole, G. C. Aers, R. Cheriton, S. Fr�d�rick, D. Kim, J. Lapointe, P. Hawrylak, and M. KorkusiDski) -- 4 SENSORS, DETECTORS, AND ENERGY -- Three-Dimensional Position-Sensitive Wide Bandgap Semiconductor Gamma-Ray Imaging Detectors (Zhong He) -- Semiconductor Scintillator for Three-Dimensional Array of Radiation Detectors (Serge Luryi and Arsen Subashiev) -- Semiconductor Gamma Radiation Detectors: Band Structure Effects in Energy Resolution (Arsen Subashiev and Serge Luryi).
505 8# - FORMATTED CONTENTS NOTE
Remark 2 The Future of Microelectronics is ... Macroelectronics (M. A. Alam, N. Pimparkar, and B. Ray) -- An Integration Challenge: Information and Communication Technologies to Address Indoor Air Quality in Commercial Buildings (M. D'Iorio) -- Quantum-Dot Infrared Photodetectors: In Search of the Right Design for Room-Temperature Operation (A. Sergeev, V. Mitin, L. H. Chien, and N. Vagidov) -- Treating the Case of Incurable Hysteresis in VO2 (M. Gurvitch, S. Luryi, A. Polyakov, and A. Shabalov) -- Exploratory Studies on Silicon-Based Oxide Fuel Cell Power Sources Incorporating Ultrathin Nanostructured Platinum and Cerium Oxide Films as Anode Components (Bo-Kuai Lai, A. C. Johnson, H. Xiong, C. Ko, and S. Ramanathan) -- Index.
520 ## - SUMMARY, ETC.
Summary, etc In the summer of 2009, leading professionals from industry, government, and academia gathered for a free-spirited debate on the future trends of microelectronics. This volume represents the summary of their valuable contributions. Providing a cohesive exploration and holistic vision of semiconductor microelectronics, this text answers such questions as: What is the future beyond shrinking silicon devices and the field-effect transistor principle? Are there green pastures beyond the traditional semiconductor technologies? This resource also identifies the direction the field is taking, enabling microelectronics professionals and students to conduct research in an informed, profitable, and forward-looking fashion.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
Subject Nanotechnology
General subdivision Technological innovations.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
Subject Detectors
General subdivision Technological innovations.
700 1# - AUTHOR 2
Author 2 Luryi, Serge,
700 1# - AUTHOR 2
Author 2 Xu, Jimmy,
700 1# - AUTHOR 2
Author 2 Zaslavsky, Alexander,
856 42 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier https://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=5599322
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type eBooks
264 #1 -
-- [Hoboken, New Jersey] :
-- IEEE Press,
-- c2010
264 #2 -
-- [Piscataqay, New Jersey] :
-- IEEE Xplore,
-- [2010]
336 ## -
-- text
-- rdacontent
337 ## -
-- electronic
-- isbdmedia
338 ## -
-- online resource
-- rdacarrier
588 ## -
-- Description based on PDF viewed 12/21/2015.
695 ## -
-- Absorption
695 ## -
-- Annealing
695 ## -
-- Anodes
695 ## -
-- Apertures
695 ## -
-- Arrays
695 ## -
-- Biological processes
695 ## -
-- Bit rate
695 ## -
-- Bolometers
695 ## -
-- Books
695 ## -
-- Buildings
695 ## -
-- CMOS integrated circuits
695 ## -
-- CMOS technology
695 ## -
-- Capacitance
695 ## -
-- Carbon
695 ## -
-- Carrier confinement
695 ## -
-- Cathodes
695 ## -
-- Cavity resonators
695 ## -
-- Charge carrier processes
695 ## -
-- Chemical sensors
695 ## -
-- Coherence
695 ## -
-- Computers
695 ## -
-- Conductivity
695 ## -
-- Correlation
695 ## -
-- Couplings
695 ## -
-- Current
695 ## -
-- Current measurement
695 ## -
-- Current-voltage characteristics
695 ## -
-- Data mining
695 ## -
-- Detectors
695 ## -
-- Dielectrics
695 ## -
-- Diode lasers
695 ## -
-- Dispersion
695 ## -
-- Distributed Bragg reflectors
695 ## -
-- Doping
695 ## -
-- Electric fields
695 ## -
-- Electric potential
695 ## -
-- Electron optics
695 ## -
-- Electron tubes
695 ## -
-- Energy loss
695 ## -
-- Energy resolution
695 ## -
-- Epitaxial growth
695 ## -
-- Equations
695 ## -
-- Etching
695 ## -
-- Fabrication
695 ## -
-- Face
695 ## -
-- Films
695 ## -
-- Flash memory
695 ## -
-- Fluctuations
695 ## -
-- Focusing
695 ## -
-- Gallium nitride
695 ## -
-- Games
695 ## -
-- Gas lasers
695 ## -
-- Gases
695 ## -
-- Germanium
695 ## -
-- Gratings
695 ## -
-- Hall effect
695 ## -
-- Heating
695 ## -
-- Hippocampus
695 ## -
-- Hospitals
695 ## -
-- Hysteresis
695 ## -
-- Impact ionization
695 ## -
-- Indexes
695 ## -
-- Indium phosphide
695 ## -
-- Information processing
695 ## -
-- Laser transitions
695 ## -
-- Lead
695 ## -
-- Lithography
695 ## -
-- Logic gates
695 ## -
-- Luminescence
695 ## -
-- MOSFETs
695 ## -
-- Magnetic fields
695 ## -
-- Magnetic hysteresis
695 ## -
-- Magnetization
695 ## -
-- Materials
695 ## -
-- Metals
695 ## -
-- Metamaterials
695 ## -
-- Microcavities
695 ## -
-- Microelectronics
695 ## -
-- Microprocessors
695 ## -
-- Microstrip
695 ## -
-- Microstructure
695 ## -
-- Milling
695 ## -
-- Modulation
695 ## -
-- Morphology
695 ## -
-- Nanophotonics
695 ## -
-- Nanoscale devices
695 ## -
-- Nanostructures
695 ## -
-- Nanowires
695 ## -
-- Nerve fibers
695 ## -
-- Next generation networking
695 ## -
-- Nickel
695 ## -
-- Noise
695 ## -
-- Nonvolatile memory
695 ## -
-- Numerical analysis
695 ## -
-- Optical device fabrication
695 ## -
-- Optical fibers
695 ## -
-- Optical interconnections
695 ## -
-- Optical losses
695 ## -
-- Optical materials
695 ## -
-- Optical polarization
695 ## -
-- Optical pumping
695 ## -
-- Optical receivers
695 ## -
-- Optical resonators
695 ## -
-- Optical sensors
695 ## -
-- Optical surface waves
695 ## -
-- Optical transmitters
695 ## -
-- Optical waveguides
695 ## -
-- Passivation
695 ## -
-- Passive optical networks
695 ## -
-- Phase change materials
695 ## -
-- Phonons
695 ## -
-- Photodetectors
695 ## -
-- Photonic band gap
695 ## -
-- Photonic crystals
695 ## -
-- Photonics
695 ## -
-- Photovoltaic cells
695 ## -
-- Pixel
695 ## -
-- Plasmas
695 ## -
-- Power demand
695 ## -
-- Proposals
695 ## -
-- Pump lasers
695 ## -
-- Quantization
695 ## -
-- Quantum cascade lasers
695 ## -
-- Quantum computing
695 ## -
-- Quantum dots
695 ## -
-- Radiative recombination
695 ## -
-- Random access memory
695 ## -
-- Registers
695 ## -
-- Resonant frequency
695 ## -
-- Resource management
695 ## -
-- Scattering
695 ## -
-- Self-assembly
695 ## -
-- Semiconductor device measurement
695 ## -
-- Semiconductor lasers
695 ## -
-- Semiconductor waveguides
695 ## -
-- Sensitivity
695 ## -
-- Sensor phenomena and characterization
695 ## -
-- Silicon
695 ## -
-- Silicon germanium
695 ## -
-- Silicon on insulator technology
695 ## -
-- Solid modeling
695 ## -
-- Stimulated emission
695 ## -
-- Strain
695 ## -
-- Stress
695 ## -
-- Substrates
695 ## -
-- Superconducting magnets
695 ## -
-- Switches
695 ## -
-- Synchronization
695 ## -
-- Technological innovation
695 ## -
-- Telecommunications
695 ## -
-- Temperature distribution
695 ## -
-- Temperature measurement
695 ## -
-- Temperature sensors
695 ## -
-- Tensile strain
695 ## -
-- Thermal conductivity
695 ## -
-- Thin film transistors
695 ## -
-- Three dimensional displays
695 ## -
-- Tunneling
695 ## -
-- Vertical cavity surface emitting lasers
695 ## -
-- Voltage measurement
695 ## -
-- Waveguide lasers
695 ## -
-- Wires

No items available.