Power GaN Devices (Record no. 77783)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 05369nam a22006015i 4500 |
| 001 - CONTROL NUMBER | |
| control field | 978-3-319-43199-4 |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20220801215717.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 160908s2017 sz | s |||| 0|eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9783319431994 |
| -- | 978-3-319-43199-4 |
| 082 04 - CLASSIFICATION NUMBER | |
| Call Number | 621.31 |
| 245 10 - TITLE STATEMENT | |
| Title | Power GaN Devices |
| Sub Title | Materials, Applications and Reliability / |
| 250 ## - EDITION STATEMENT | |
| Edition statement | 1st ed. 2017. |
| 300 ## - PHYSICAL DESCRIPTION | |
| Number of Pages | X, 380 p. 306 illus., 266 illus. in color. |
| 490 1# - SERIES STATEMENT | |
| Series statement | Power Electronics and Power Systems, |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Remark 2 | 1 Properties and advantages of gallium nitride; Daisuke Ueda -- 2 Substrate issues and epitaxial growth; Stacia Keller -- 3 GaN-on-Silicon CMOS compatible process; Denis Marcon -- 4 Lateral GaN-based power devices; Umesh Mishra -- 5 GaN-based vertical transistors; Srabanti Chowduri -- 6 GaN-based nanowire transistors; Tomas Palacios -- 7 Deep level characterization: electrical and optical methods; Robert Kaplar -- 8 Modeling of GaN HEMTs: from device-level simulation to virtual prototyping; Gilberto Curatola, Giovanni Verzellesi -- 9 Performance-limiting defects in GaN-based HEMTs: from surface states to common impurities; Bisi, Rossetto, De Santi, Meneghini, Meneghesso, Zanoni -- 10 Cascode configuration for normally-off devices; Primit Parikh -- 11 Gate injection transistors: E-mode operation and conductivity modulation; Tetsuso Ueda -- 12 Fluorine implanted E-mode transistors; Kevin Chen -- 13 Drift effects in GaN HV power transistors; Joachim Wuerfl -- 14 Reliability Aspects of 650V rated GaN Power Devices; P. Moens, A. Banerjee -- 15 Switching Characteristics of Gallium-Nitride Transistors: system level issues; Fred Lee, Qiang Li, Xiucheng Huang and Zhengyang Liu. |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc | This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation. |
| 700 1# - AUTHOR 2 | |
| Author 2 | Meneghini, Matteo. |
| 700 1# - AUTHOR 2 | |
| Author 2 | Meneghesso, Gaudenzio. |
| 700 1# - AUTHOR 2 | |
| Author 2 | Zanoni, Enrico. |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | https://doi.org/10.1007/978-3-319-43199-4 |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Koha item type | eBooks |
| 264 #1 - | |
| -- | Cham : |
| -- | Springer International Publishing : |
| -- | Imprint: Springer, |
| -- | 2017. |
| 336 ## - | |
| -- | text |
| -- | txt |
| -- | rdacontent |
| 337 ## - | |
| -- | computer |
| -- | c |
| -- | rdamedia |
| 338 ## - | |
| -- | online resource |
| -- | cr |
| -- | rdacarrier |
| 347 ## - | |
| -- | text file |
| -- | |
| -- | rda |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Electric power production. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Semiconductors. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Optical materials. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Electronics. |
| 650 14 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Electrical Power Engineering. |
| 650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Semiconductors. |
| 650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Optical Materials. |
| 650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Mechanical Power Engineering. |
| 650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Electronics and Microelectronics, Instrumentation. |
| 830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE | |
| -- | 2196-3193 |
| 912 ## - | |
| -- | ZDB-2-ENG |
| 912 ## - | |
| -- | ZDB-2-SXE |
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