Highly Integrated Gate Drivers for Si and GaN Power Transistors (Record no. 77967)

000 -LEADER
fixed length control field 04204nam a22005295i 4500
001 - CONTROL NUMBER
control field 978-3-030-68940-7
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20220801215902.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 210331s2021 sz | s |||| 0|eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 9783030689407
-- 978-3-030-68940-7
082 04 - CLASSIFICATION NUMBER
Call Number 621.3815
100 1# - AUTHOR NAME
Author Seidel, Achim.
245 10 - TITLE STATEMENT
Title Highly Integrated Gate Drivers for Si and GaN Power Transistors
250 ## - EDITION STATEMENT
Edition statement 1st ed. 2021.
300 ## - PHYSICAL DESCRIPTION
Number of Pages XVII, 124 p. 72 illus., 56 illus. in color.
505 0# - FORMATTED CONTENTS NOTE
Remark 2 Chapter 1. Introduction -- Chapter 2. Fundamentals -- Chapter 3. Gate Drivers Based on High-Voltage Charge Storing (HVCS) -- Chapter 4. Gate Drivers Based on High-Voltage Energy Storing (HVES) -- Chapter 5. Gate Drivers for Large Gate Loops Based on HVES -- Chapter 6. Outlook and FutureWork -- Chapter 7. Conclusion.
520 ## - SUMMARY, ETC.
Summary, etc This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions. Provides readers with a comprehensive, all-in-one source for gate driver IC design, including implementation examples; Introduces new gate drive concepts including theory and design guidelines; Describes new gate driver architectures based on the presented gate drive concepts; Includes circuit design solutions, design aspects, and experimental verification of the implemented gate drivers; Covers the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors.
700 1# - AUTHOR 2
Author 2 Wicht, Bernhard.
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier https://doi.org/10.1007/978-3-030-68940-7
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type eBooks
264 #1 -
-- Cham :
-- Springer International Publishing :
-- Imprint: Springer,
-- 2021.
336 ## -
-- text
-- txt
-- rdacontent
337 ## -
-- computer
-- c
-- rdamedia
338 ## -
-- online resource
-- cr
-- rdacarrier
347 ## -
-- text file
-- PDF
-- rda
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Electronic circuits.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Electronics.
650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Semiconductors.
650 14 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Electronic Circuits and Systems.
650 24 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Electronics and Microelectronics, Instrumentation.
650 24 - SUBJECT ADDED ENTRY--SUBJECT 1
-- Semiconductors.
912 ## -
-- ZDB-2-ENG
912 ## -
-- ZDB-2-SXE

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