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Practical terahertz electronics. (Record no. 82818)

000 -LEADER
fixed length control field 08036nam a2200745 i 4500
001 - CONTROL NUMBER
control field 9780750331715
003 - CONTROL NUMBER IDENTIFIER
control field IOP
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20230516170227.0
006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS
fixed length control field m eo d
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr cn |||m|||a
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 220118s2021 enka fob 000 0 eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9780750331715
Qualifying information ebook
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9780750331708
Qualifying information mobi
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN 9780750331692
Qualifying information print
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN 9780750331722
Qualifying information myPrint
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1088/978-0-7503-3171-5
Source of number or code doi
035 ## - SYSTEM CONTROL NUMBER
System control number (CaBNVSL)thg00083117
035 ## - SYSTEM CONTROL NUMBER
System control number (OCoLC)1294829759
040 ## - CATALOGING SOURCE
Original cataloging agency CaBNVSL
Language of cataloging eng
Description conventions rda
Transcribing agency CaBNVSL
Modifying agency CaBNVSL
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number TK7877
Item number .K537 2021eb vol. 1
072 #7 - SUBJECT CATEGORY CODE
Subject category code TJFD
Source bicssc
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC008000
Source bisacsh
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.381
Edition number 23
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Khanna, Vinod Kumar,
Dates associated with a name 1952-
Relator term author.
9 (RLIN) 26421
245 10 - TITLE STATEMENT
Title Practical terahertz electronics.
Number of part/section of a work Volume 1,
Name of part/section of a work Solid-state devices and vacuum tubes :
Remainder of title devices and applications /
Statement of responsibility, etc. Vinod Kumar Khanna.
246 30 - VARYING FORM OF TITLE
Title proper/short title Solid-state devices and vacuum tubes.
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) :
Name of producer, publisher, distributor, manufacturer IOP Publishing,
Date of production, publication, distribution, manufacture, or copyright notice [2021]
300 ## - PHYSICAL DESCRIPTION
Extent 1 online resource (various pagings) :
Other physical details illustrations (some color).
336 ## - CONTENT TYPE
Content type term text
Source rdacontent
337 ## - MEDIA TYPE
Media type term electronic
Source isbdmedia
338 ## - CARRIER TYPE
Carrier type term online resource
Source rdacarrier
490 1# - SERIES STATEMENT
Series statement [IOP release $release]
490 1# - SERIES STATEMENT
Series statement IOP ebooks. [2021 collection]
500 ## - GENERAL NOTE
General note "Version: 202112"--Title page verso.
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc. note Includes bibliographical references.
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note part I. Solid-state electronic devices. 1. Terahertz electromagnetic waves -- 1.1. What are terahertz waves? -- 1.2. The electromagnetic waves -- 1.3. Subdivisions of electromagnetic waves according to frequencies : the electromagnetic spectrum -- 1.4. Location of terahertz gap in the international standard band designations -- 1.5. Terahertz electronics -- 1.6. The practical perspective of electronics -- 1.7. Moving from conventional to terahertz electronics -- 1.8. Peculiarities of the terahertz gap -- 1.9. Unique advantages of terahertz gap frequencies -- 1.10. Organizational plan of the book -- 1.11. Discussion and conclusions
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 2. Schottky barrier, metal-insulator-metal, self-switching and geometric diodes -- 2.1. Schottky diode principle and switching action -- 2.2. Current-voltage equation of a non-ideal Schottky-barrier diode (SBD) -- 2.3. Components of the traditional equivalent circuit of a Schottky-barrier diode -- 2.4. Cut-off frequency of the circular-contact SBD -- 2.5. Consideration of skin effect for series resistance calculation -- 2.6. Range of applicability of traditional SBD model -- 2.7. Extended model of SBD -- 2.8. Schottky diodes with terahertz operational frequencies -- 2.9. Non-PN junction diodes -- 2.10. Discussion and conclusions
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 3. Resonant tunneling diodes -- 3.1. Resonant tunneling diode working and high-frequency capability -- 3.2. Simplest equivalent circuit model of resonant tunneling diode -- 3.3. Maximum output power conveyed to the load resistor RL -- 3.4. Small-signal transit-time equivalent circuit model of RTD -- 3.5. Physics-based small-signal equivalent circuit model -- 3.6. Terahertz resonant tunneling diodes -- 3.7. Discussion and conclusions
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 4. Avalanche transit-time and transferred-electron diodes -- 4.1. Mechanisms of creation of negative resistance -- 4.2. Frequency and power capabilities of IMPATT diode -- 4.3. Diode structure and dynamic negative resistance behavior -- 4.4. Terahertz GaAs IMPATT diodes -- 4.5. Transferred-electron diode -- 4.6. Physics of Gunn diode operation -- 4.7. Terahertz planar Gunn diodes -- 4.8. Discussion and conclusions
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 5. Heterojunction bipolar transistors -- 5.1. Capability of heterojunction bipolar transistor to work at high frequencies -- 5.2. Gain definitions -- 5.3. Frequency response of the common-emitter transistor amplifier -- 5.4. Figures of merit (FOMs) for high-frequency bipolar transistors -- 5.5. Correlation of terms in cut-off frequency equation with components of equivalent circuit of the bipolar transistor -- 5.6. DHBT IC technologies -- 5.7. Discussion and conclusions
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 6. Metal-oxide semiconductor field-effect transistors -- 6.1. MOSFET construction and operation -- 6.2. Short-circuit current gain -- 6.3. MOSFET capacitances -- 6.4. Cut-off frequency -- 6.5. Circumventing the MOSFET speed limitations due to long electron transit time -- 6.6. Terahertz MOSFET detectors -- 6.7. Discussion and conclusions
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 7. High-electron-mobility transistors -- 7.1. MESFET and HEMT basics -- 7.2. HEMT operation at high frequencies -- 7.3. Built-in potential and capacitances -- 7.4. Analysis of an HEMT structure -- 7.5. InP terahertz HEMT technology -- 7.6. Discussion and conclusions
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note part II. Vacuum electronic devices. 8. Travelling wave tubes and backward wave oscillators -- 8.1. General constructional features of TWTs and BWOs -- 8.2. Closer examination of working of TWT/BWO -- 8.3. Difference between a travelling wave tube and backward wave oscillator from phase/group velocity viewpoint -- 8.4. Electron bunching and amplification of the signal in a TWT -- 8.5. Applications of TWTs -- 8.6. Terahertz TWTs -- 8.7. Operation of the backward wave oscillator -- 8.8. Advantages of the backward wave oscillator -- 8.9. Limitations of the backward wave oscillator -- 8.10. Frequency/power levels achieved with backward wave oscillators -- 8.11. Discussion and conclusions
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 9. Gyrotrons -- 9.1. Difficulties faced with classical electron tubes in the terahertz range -- 9.2. Periodic beam devices versus periodic circuit devices -- 9.3. Advantages offered by gyrotron for terahertz generation -- 9.4. Components and constructional details of gyrotron -- 9.5. Cyclotron frequency -- 9.6. Cyclotron resonance maser (CRM) -- 9.7. Explanation of the bunching mechanism of a gyrotron with a simplified three-electron model -- 9.8. Dispersion diagram of a gyrotron -- 9.9. Gyrotron research status -- 9.10. Discussion and conclusions
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 10. Free electron lasers -- 10.1. Free electron laser versus conventional laser -- 10.2. Main components of a free electron laser -- 10.3. Equation of motion of the electron in the undulator -- 10.4. Operating modes of the free electron laser -- 10.5. Discussion and conclusions.
520 3# - SUMMARY, ETC.
Summary, etc. This research and reference text provides a comprehensive and authoritative survey of the state-of-the-art in terahertz electronics research. Covering the fundamentals, operational principles, and theoretical aspects of the field, the book equips the reader to take the practical steps involved in the fabrication of devices that work in the terahertz frequency range.
521 ## - TARGET AUDIENCE NOTE
Target audience note Researchers and professionals working with terahertz electronics and technologies.
530 ## - ADDITIONAL PHYSICAL FORM AVAILABLE NOTE
Additional physical form available note Also available in print.
538 ## - SYSTEM DETAILS NOTE
System details note Mode of access: World Wide Web.
538 ## - SYSTEM DETAILS NOTE
System details note System requirements: Adobe Acrobat Reader, EPUB reader, or Kindle reader.
545 ## - BIOGRAPHICAL OR HISTORICAL DATA
Biographical or historical data Vinod Kumar Khanna is an independent researcher at Chandigarh, India. He is a retired Chief Scientist from Council of Scientific & Industrial Research (CSIR)-Central Electronics Engineering Research Institute (CEERI), Pilani-India, and retired Professor from Academy of Scientific & Innovative Research (AcSIR), Ghaziabad, India.
588 0# - SOURCE OF DESCRIPTION NOTE
Source of description note Title from PDF title page (viewed on January 18, 2022).
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Terahertz technology.
9 (RLIN) 4765
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Submillimeter waves.
9 (RLIN) 28695
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Solid state electronics.
9 (RLIN) 3417
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Vacuum-tubes.
9 (RLIN) 70323
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Electronic devices & materials.
Source of heading or term bicssc
9 (RLIN) 70218
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Materials.
Source of heading or term bisacsh
9 (RLIN) 7549
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element Institute of Physics (Great Britain),
Relator term publisher.
9 (RLIN) 11622
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Relationship information Print version:
International Standard Book Number 9780750331692
-- 9780750331722
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title IOP (Series).
Name of part/section of a work Release 21.
9 (RLIN) 70324
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title IOP ebooks.
Name of part/section of a work 2021 collection.
9 (RLIN) 70325
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="https://iopscience.iop.org/book/978-0-7503-3171-5">https://iopscience.iop.org/book/978-0-7503-3171-5</a>
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type eBooks

No items available.