Transient Electro-Thermal Modeling on Power Semiconductor Devices (Record no. 85163)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 04261nam a22005535i 4500 |
| 001 - CONTROL NUMBER | |
| control field | 978-3-031-02506-8 |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20240730163946.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 220601s2014 sz | s |||| 0|eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9783031025068 |
| -- | 978-3-031-02506-8 |
| 082 04 - CLASSIFICATION NUMBER | |
| Call Number | 621.3 |
| 100 1# - AUTHOR NAME | |
| Author | Gachovska, Tanya Kirilova. |
| 245 10 - TITLE STATEMENT | |
| Title | Transient Electro-Thermal Modeling on Power Semiconductor Devices |
| 250 ## - EDITION STATEMENT | |
| Edition statement | 1st ed. 2014. |
| 300 ## - PHYSICAL DESCRIPTION | |
| Number of Pages | XVI, 68 p. |
| 490 1# - SERIES STATEMENT | |
| Series statement | Synthesis Lectures on Power Electronics, |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Remark 2 | Nomenclature -- Temperature Dependencies of Material and Device Parameters -- One-Dimensional Thermal Model -- Realization of Power IGBT and Diode Thermal Model -- References -- Authors' Biographies. |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc | This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device. |
| 700 1# - AUTHOR 2 | |
| Author 2 | Hudgins, Jerry. |
| 700 1# - AUTHOR 2 | |
| Author 2 | Du, Bin. |
| 700 1# - AUTHOR 2 | |
| Author 2 | Santi, Enrico. |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | https://doi.org/10.1007/978-3-031-02506-8 |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Koha item type | eBooks |
| 264 #1 - | |
| -- | Cham : |
| -- | Springer International Publishing : |
| -- | Imprint: Springer, |
| -- | 2014. |
| 336 ## - | |
| -- | text |
| -- | txt |
| -- | rdacontent |
| 337 ## - | |
| -- | computer |
| -- | c |
| -- | rdamedia |
| 338 ## - | |
| -- | online resource |
| -- | cr |
| -- | rdacarrier |
| 347 ## - | |
| -- | text file |
| -- | |
| -- | rda |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Electrical engineering. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Electric power production. |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Electronics. |
| 650 14 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Electrical and Electronic Engineering. |
| 650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Electrical Power Engineering. |
| 650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Mechanical Power Engineering. |
| 650 24 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Electronics and Microelectronics, Instrumentation. |
| 830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE | |
| -- | 1931-9533 |
| 912 ## - | |
| -- | ZDB-2-SXSC |
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