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High Permittivity Gate Dielectric Materials [electronic resource] / edited by Samares Kar.

Contributor(s): Kar, Samares [editor.] | SpringerLink (Online service).
Material type: materialTypeLabelBookSeries: Springer Series in Advanced Microelectronics: 43Publisher: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2013Description: XXXII, 489 p. 325 illus., 168 illus. in color. online resource.Content type: text Media type: computer Carrier type: online resourceISBN: 9783642365355.Subject(s): Engineering | Solid state physics | Spectroscopy | Microscopy | Electronics | Microelectronics | Optical materials | Electronic materials | Engineering | Electronics and Microelectronics, Instrumentation | Optical and Electronic Materials | Solid State Physics | Spectroscopy and Microscopy | Engineering, generalAdditional physical formats: Printed edition:: No titleDDC classification: 621.381 Online resources: Click here to access online
Contents:
Historical Perspectives -- High Mobility Channels -- Non-Volatile Memory -- Hafnium-Based Gate Dielectric Materials -- Lanthanum-Based High-K Gate Dielectric Materials -- Crystalline High-K Gate Dielectric Materials -- High-K Gate Dielectric Processing.- Metal Gate Electrodes -- Flat-Band/Threshold Voltage Control -- Interfaces and Defects -- Electrical Characterization and Parameter Extraction -- Non-Contact Metrology of High-K Gate Dielectrics -- Channel Mobility -- High-K Gate Dielectric Reliability Issues -- Bias Temperature Instability -- Integration Issues.  .
In: Springer eBooksSummary: "The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects.".
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Historical Perspectives -- High Mobility Channels -- Non-Volatile Memory -- Hafnium-Based Gate Dielectric Materials -- Lanthanum-Based High-K Gate Dielectric Materials -- Crystalline High-K Gate Dielectric Materials -- High-K Gate Dielectric Processing.- Metal Gate Electrodes -- Flat-Band/Threshold Voltage Control -- Interfaces and Defects -- Electrical Characterization and Parameter Extraction -- Non-Contact Metrology of High-K Gate Dielectrics -- Channel Mobility -- High-K Gate Dielectric Reliability Issues -- Bias Temperature Instability -- Integration Issues.  .

"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects.".

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