Includes bibliographical references and index.

Online resource; title from PDF title page (Ebsco, viewed August 29, 2017).

Cover ; Half-Title Page ; Title Page; Copyright Page; Contents; Preamble: Rutherford and IBA; Introduction; I.1. Interactions with electrons; I.2. Elastic scattering from nuclei; I.3. Nuclear reactions; 1. Fundamentals of Ion-solid Interactions with a Focus on the Nanoscale; 1.1. General considerations; 1.1.1. Wavelengths of ions, electrons and X-rays; 1.1.2. Penetration depths of ions, electrons and X-rays; 1.2. Basic physical concepts; 1.2.1. Energy loss and range of ions in matter; 1.2.2. Energy straggling; 1.2.3. Elastic scattering; 1.3. Channeling, shadowing and blocking

1.3.1. Channeling1.3.2. Shadowing; 1.3.3. Blocking; 1.4. 1D layers: limits to depth resolution; 1.5. 2D and 3D objects: aspects of lateral resolution; 1.5.1. Beam focusing; 1.5.2. Simulation of nanostructures; 2. Instruments and Methods; 2.1. Instruments; 2.1.1. Accelerators; 2.1.2. Detectors and data acquisition; 2.1.3. Analysis chambers; 2.2. Methods; 2.2.1. RBS and MEIS; 2.2.2. ERDA; 2.2.3. Narrow resonance profiling; 3. Applications; 3.1. Example of resonances/light element profiling; 3.1.1. Introduction; 3.1.2. Channeling study of the SiO2/Si interface

3.1.3. Narrow resonance profiling and stable isotopic tracing studies of the oxidation of silicon3.1.4. Thermal oxidation of silicon carbide; 3.1.5. Diffusion and reaction of CO in thermal SiO2: transport, exchange and SiC nanocrystal growth; 3.2. Quantitative analysis/heavy element profiling; 3.2.1. RBS quantitative analysis of quantum dots and quantum wells; 3.2.2. CMOS transistors and the race for miniaturization; 3.3. Examples of HR-ERD analysis; 3.3.1. Introduction; 3.3.2. HRBS/HR-ERD comparison; 3.3.3. HR-ERD profiles of Al2O3/TiO2 nanolaminates; 3.4. Channeling/defect profiling

3.4.1. Introduction3.4.2. Arsenic implant in ultra-shallow-junctions; 3.5. Blocking/strain profiling; 3.5.1. Introduction; 3.5.2. GaN/AlN system; 3.5.3. Si/Ge system; 3.6. 3D MEIS/real space structural analysis; 3.6.1. Electrostatic analyzer method; 3.6.2. Time-of-flight method; 4. The Place of NanoIBA in the Characterization Forest; 4.1. Introduction; 4.2. Scope of physical and chemical characterization; 4.2.1. Targeted information by material characterization; 4.2.2. Basic principle and instrumentation of material characterization; 4.3. Ion-based characterization techniques overview

4.4. Ion-mass-spectroscopy-based characterization techniques versus IBA4.4.1. Secondary ion mass spectrometry; 4.4.2. Atom probe tomography; 4.5. Other characterization techniques versus IBA; 4.5.1. X-ray photoelectron spectroscopy; 4.5.2. X-ray diffraction; 4.5.3. X-ray absorption fine structure; 4.5.4. Analytical electron microscopy; 4.6. Emerging ion-beam-based techniques; 4.6.1. Low energy ion scattering; 4.6.2. Iono-luminescence; 4.6.3. Scanning helium ion microscopy; 4.6.4. Grazing incidence fast atoms diffraction; List of Acronyms; Bibliography; Index