Applications of silicon-germanium heterostructure devices / .K. Maiti and G.A. Armstrong.
By: Maiti, C. K [author.]
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Contributor(s): Armstrong, G. A
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Material type: ![materialTypeLabel](/opac-tmpl/lib/famfamfam/BK.png)
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Contents:
chapter 1 INTRODUCTION -- chapter 2 FILM GROWTH AND MATERIAL PARAMETERS -- chapter 3 PRINCIPLE OF SIGE HBTS -- chapter 4 DESIGN OF SIGE HBTS -- chapter 5 SIMULATION OF SIGE HBTS -- chapter 6 STRAINED-SI HETEROSTRUCTURE FETS -- chapter 7 SIGE HETEROSTRUCTURE FETS -- chapter 8 METALLIZATION AND HETEROSTRUCTURE SCHOTTKY DIODES -- chapter 9 SIGE OPTOELECTRONIC DEVICES -- chapter 10 RF APPLICATIONS OF SIGE HBTS.
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chapter 1 INTRODUCTION -- chapter 2 FILM GROWTH AND MATERIAL PARAMETERS -- chapter 3 PRINCIPLE OF SIGE HBTS -- chapter 4 DESIGN OF SIGE HBTS -- chapter 5 SIMULATION OF SIGE HBTS -- chapter 6 STRAINED-SI HETEROSTRUCTURE FETS -- chapter 7 SIGE HETEROSTRUCTURE FETS -- chapter 8 METALLIZATION AND HETEROSTRUCTURE SCHOTTKY DIODES -- chapter 9 SIGE OPTOELECTRONIC DEVICES -- chapter 10 RF APPLICATIONS OF SIGE HBTS.
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