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Research on the Radiation Effects and Compact Model of SiGe HBT [electronic resource] / by Yabin Sun.

By: Sun, Yabin [author.].
Contributor(s): SpringerLink (Online service).
Material type: materialTypeLabelBookSeries: Springer Theses, Recognizing Outstanding Ph.D. Research: Publisher: Singapore : Springer Nature Singapore : Imprint: Springer, 2018Edition: 1st ed. 2018.Description: XXIV, 168 p. 171 illus. online resource.Content type: text Media type: computer Carrier type: online resourceISBN: 9789811046124.Subject(s): Electronics | Semiconductors | Optical materials | Electronic circuits | Condensed matter | Electronics and Microelectronics, Instrumentation | Semiconductors | Optical Materials | Electronic Circuits and Systems | Condensed Matter PhysicsAdditional physical formats: Printed edition:: No title; Printed edition:: No title; Printed edition:: No titleDDC classification: 621.381 Online resources: Click here to access online
Contents:
Introduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion.
In: Springer Nature eBookSummary: This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.
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Introduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion.

This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.

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