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Nanometer CMOS ICs [electronic resource] : From Basics to ASICs / by Harry J.M. Veendrick.

By: J.M. Veendrick, Harry [author.].
Contributor(s): SpringerLink (Online service).
Material type: materialTypeLabelBookPublisher: Cham : Springer International Publishing : Imprint: Springer, 2017Edition: 2nd ed. 2017.Description: XXXVII, 611 p. 445 illus., 271 illus. in color. online resource.Content type: text Media type: computer Carrier type: online resourceISBN: 9783319475974.Subject(s): Electronic circuits | Electronics | Electronic Circuits and Systems | Electronics and Microelectronics, InstrumentationAdditional physical formats: Printed edition:: No title; Printed edition:: No title; Printed edition:: No titleDDC classification: 621.3815 Online resources: Click here to access online
Contents:
Basic Principles -- Geometrical-, Physical- and Field-Scaling Impact on MOS Transistor Behavior -- Manufacture of MOS Devices -- CMOS Circuits -- Special Circuits, Devices and Technologies -- Memories -- Very Large Scale Integration (VLSI) and ASICs -- Low Power, a Hot Topic in IC Design -- Robustness of Nanometer CMOS Designs: Signal Integrity, Variability and Reliability -- Testing, Yield, Packaging, Debug and Failure Analysis -- Effects of Scaling on MOS IC Design and Consequences for the Roadmap.
In: Springer Nature eBookSummary: This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.
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Basic Principles -- Geometrical-, Physical- and Field-Scaling Impact on MOS Transistor Behavior -- Manufacture of MOS Devices -- CMOS Circuits -- Special Circuits, Devices and Technologies -- Memories -- Very Large Scale Integration (VLSI) and ASICs -- Low Power, a Hot Topic in IC Design -- Robustness of Nanometer CMOS Designs: Signal Integrity, Variability and Reliability -- Testing, Yield, Packaging, Debug and Failure Analysis -- Effects of Scaling on MOS IC Design and Consequences for the Roadmap.

This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.

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