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Tunneling Field Effect Transistor Technology [electronic resource] / edited by Lining Zhang, Mansun Chan.

Contributor(s): Zhang, Lining [editor.] | Chan, Mansun [editor.] | SpringerLink (Online service).
Material type: materialTypeLabelBookPublisher: Cham : Springer International Publishing : Imprint: Springer, 2016Edition: 1st ed. 2016.Description: IX, 213 p. 147 illus., 122 illus. in color. online resource.Content type: text Media type: computer Carrier type: online resourceISBN: 9783319316536.Subject(s): Electronic circuits | Electronics | Electronic Circuits and Systems | Electronics and Microelectronics, InstrumentationAdditional physical formats: Printed edition:: No title; Printed edition:: No title; Printed edition:: No titleDDC classification: 621.3815 Online resources: Click here to access online
Contents:
Steep Slope Devices and TFETs -- Tunnel-FET Fabrication and Characterization -- Compact Models of TFETs -- Challenges and Designs of TFET for Digital Applications -- Atomistic Simulations of Tunneling FETs -- Quantum Transport Simulation of III-V TFETs with Reduced-Order k ·p Method -- Carbon Nanotube TFETs: Structure Optimization with Numerical Simulation.
In: Springer Nature eBookSummary: This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.
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Steep Slope Devices and TFETs -- Tunnel-FET Fabrication and Characterization -- Compact Models of TFETs -- Challenges and Designs of TFET for Digital Applications -- Atomistic Simulations of Tunneling FETs -- Quantum Transport Simulation of III-V TFETs with Reduced-Order k ·p Method -- Carbon Nanotube TFETs: Structure Optimization with Numerical Simulation.

This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.

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