Epitaxial graphene on silicon carbide : modelling, characterization, and applications /
edited by Gemma Rius, Philippe Godignon.
- 1 online resource (xiii, 199 pages)
chapter 1 Epitaxial graphene on SiC substrate: A view from a specialist of SiC growth and materials science / chapter 2 Growth Mechanism, Structures, and Properties of Graphene on SiC(0001) Surfaces: Theoretical and Experimental Studies at the Atomic Scale / chapter 3 Fabrication of Graphene by Thermal Decomposition of SiC / chapter 4 Nanoscale electrical and structural properties of epitaxial graphene interface with sic(0001) / chapter 5 Theory of graphene growth on sic substrate / chapter 6 Epitaxial Graphene on SiC from the Viewpoint of Planar Technology / chapter 7 Beauty of Quantum Transport in Graphene / Gabriel Ferro -- Wataru Norimatsu Stephan Irle Michiko Kusunoki -- Gholam Reza Yazdi Tihomir Iakimova Rositza Yakimova -- Filippo Giannazzo Ioannis Deretzis Antonino La Magna Giuseppe Nicotra Corrado Spinella Fabrizio Roccaforte Rositza Yakimova -- Hiroyuki Kageshima -- Gemma Rius Philippe Godignon -- Benoit Jouault Félicien Schopfer Wilfrid Poirier.
"This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It addresses comprehensively all aspects relevant for the study and technology development of EG materials and their applications. It includes the state of the art on the synthesis of EG-SiC, which is profusely explained as a function of SiC substrate characteristics, such as polytype, polarity, and wafer cut, as well as both in situ and ex situ conditioning techniques, including H2 pre-deposition annealing, chemical mechanical polishing, etc. It generously describes growth studies including the most popular techniques for high quality and controlled deposition such as ultrahigh vacuum-processing, partial-pressure, or graphite cap controlled-sublimation techniques. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia."--Provided by publisher.