Sun, Yabin. <br/><br/>
Research on the Radiation Effects and Compact Model of SiGe HBT  [electronic resource] / 
by Yabin Sun. 
 - 1st ed. 2018. 
 - XXIV, 168 p. 171 illus.  online resource. 
 - Springer Theses, Recognizing Outstanding Ph.D. Research,  2190-5061 .
 - Springer Theses, Recognizing Outstanding Ph.D. Research, .
<br/><br/>Introduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion. 
<br/><br/> This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique. 
<br/><br/><label>ISBN: </label>9789811046124 
<br/><br/><label>Standard No.: </label>10.1007/978-981-10-4612-4  doi 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Electronics.<br/>Semiconductors.<br/>Optical materials.<br/>Electronic circuits.<br/>Condensed matter.<br/>Electronics and Microelectronics, Instrumentation.<br/>Semiconductors.<br/>Optical Materials.<br/>Electronic Circuits and Systems.<br/>Condensed Matter Physics.
<br/><br/><label>LC Class. No.: </label>TK7800-8360 
<br/><br/><label>Dewey Class. No.: </label>621.381