Cheng, Jie. <br/><br/>
Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect   [electronic resource] / 
by Jie Cheng. 
 - 1st ed. 2018. 
 - XVIII, 137 p. 103 illus.  online resource. 
 - Springer Theses, Recognizing Outstanding Ph.D. Research,  2190-5061 .
 - Springer Theses, Recognizing Outstanding Ph.D. Research, .
<br/><br/> This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research. 
<br/><br/><label>ISBN: </label>9789811061653 
<br/><br/><label>Standard No.: </label>10.1007/978-981-10-6165-3  doi 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Manufactures.<br/>Coatings.<br/>Tribology.<br/>Corrosion and anti-corrosives.<br/>Electronics.<br/>Machines, Tools, Processes.<br/>Coatings.<br/>Tribology.<br/>Corrosion.<br/>Electronics and Microelectronics, Instrumentation.
<br/><br/><label>LC Class. No.: </label>TS1-2301 
<br/><br/><label>Dewey Class. No.: </label>670