1. The fundamentals -- 1.1. Introduction--what is an image sensor and what does it do? -- 1.2. Charge generation -- 1.3. Charge collection -- 1.4. Charge transfer -- 1.5. Charge conversion -- 1.6. pn junction -- 1.7. MOS capacitor -- 1.8. MOS transistor -- 1.9. Source follower 2. CMOS pixel architectures -- 2.1. History and technology -- 2.2. Photodiode APS -- 2.3. Pinned photodiode (4T) -- 2.4. Other PPD-based pixels -- 2.5. Hybrid and 3D image sensors 3. Advanced image sensor topics -- 3.1. Photocurrent -- 3.2. Dark current -- 3.3. Reflective barrier -- 3.4. Back-side illumination -- 3.5. Depletion depth and potential gradients -- 3.6. Punch-through -- 3.7. Field-induced junctions 4. Noise and readout techniques -- 4.1. Noise in image sensors -- 4.2. Correlated double sampling 5. Characterisation -- 5.1. Introduction -- 5.2. Readout modes -- 5.3. Principles of EO characterisation -- 5.4. Photoresponse, non-uniformity and nonlinearity -- 5.5. Photon transfer curve -- 5.6. X-ray calibration -- 5.7. Full well capacity and dynamic range -- 5.8. Dark current and DSNU -- 5.9. Noise measurement -- 5.10. Image lag -- 5.11. Quantum efficiency -- 5.12. Electrical transfer function 6. Electronics -- 6.1. On-chip electronics -- 6.2. Off-chip electronics.
This book explores the operating principles of complementary metal oxide semiconductor (CMOS) image sensors, their architecture, readout circuits, and characterisation techniques.
Physicists and engineers in image sensor characterisation, development and research.
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Dr. Konstantin Stefanov is a Senior Research Fellow at the Centre for Electronic Imaging at The Open University, UK, and has over 20 years of experience in the field of CMOS and CCD image sensors, including characterisation, simulations, and design.