Central Library

Normal view MARC view ISBD view

Compound Semiconductor Materials and Devices [electronic resource] / by Zhaojun Liu, Tongde Huang, Qiang Li, Xing Lu, Xinbo Zou.

By: Liu, Zhaojun [author.].
Contributor(s): Huang, Tongde [author.] | Li, Qiang [author.] | Lu, Xing [author.] | Zou, Xinbo [author.] | SpringerLink (Online service).
Material type: materialTypeLabelBookSeries: Synthesis Lectures on Emerging Engineering Technologies: Publisher: Cham : Springer International Publishing : Imprint: Springer, 2016Edition: 1st ed. 2016.Description: VII, 65 p. online resource.Content type: text Media type: computer Carrier type: online resourceISBN: 9783031020285.Subject(s): Engineering | Electrical engineering | Electronic circuits | Computers | Materials science | Surfaces (Technology) | Thin films | Technology and Engineering | Electrical and Electronic Engineering | Electronic Circuits and Systems | Computer Hardware | Materials Science | Surfaces, Interfaces and Thin FilmAdditional physical formats: Printed edition:: No title; Printed edition:: No titleDDC classification: 620 Online resources: Click here to access online
Contents:
Introduction -- GaN-based HEMTs and MOSHEMTs -- III-V Materials and Devices -- Summary -- References -- Authors' Biographies .
In: Springer Nature eBookSummary: Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.
    average rating: 0.0 (0 votes)
No physical items for this record

Introduction -- GaN-based HEMTs and MOSHEMTs -- III-V Materials and Devices -- Summary -- References -- Authors' Biographies .

Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.

There are no comments for this item.

Log in to your account to post a comment.