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Modeling Bipolar Power Semiconductor Devices [electronic resource] / by Tanya K. Gachovska, Jerry L. Hudgins, Enrico Santi, Angus Bryant.

By: Gachovska, Tanya K [author.].
Contributor(s): Hudgins, Jerry L [author.] | Santi, Enrico [author.] | Bryant, Angus [author.] | SpringerLink (Online service).
Material type: materialTypeLabelBookSeries: Synthesis Lectures on Power Electronics: Publisher: Cham : Springer International Publishing : Imprint: Springer, 2013Edition: 1st ed. 2013.Description: VIII, 88 p. online resource.Content type: text Media type: computer Carrier type: online resourceISBN: 9783031024986.Subject(s): Electrical engineering | Electric power production | Electronics | Electrical and Electronic Engineering | Electrical Power Engineering | Mechanical Power Engineering | Electronics and Microelectronics, InstrumentationAdditional physical formats: Printed edition:: No title; Printed edition:: No titleDDC classification: 621.3 Online resources: Click here to access online
Contents:
Introduction to Power Semiconductor Device Modeling -- Physics of Power Semiconductor Devices -- Modeling of a Power Diode and IGBT -- IGBT Under an Inductive Load-Switching Condition in Simulink -- Parameter Extraction.
In: Springer Nature eBookSummary: This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models.
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Introduction to Power Semiconductor Device Modeling -- Physics of Power Semiconductor Devices -- Modeling of a Power Diode and IGBT -- IGBT Under an Inductive Load-Switching Condition in Simulink -- Parameter Extraction.

This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models.

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