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Handbook of GaN semiconductor materials and devices / Wengang (Wayne) Bi, Hao-chung (Henry) Kuo, Pei-Cheng Ku, Bo Shen, editors.

Contributor(s): Bi, Wengang [editor.].
Material type: materialTypeLabelBookSeries: Series in optics and optoelectronics.Publisher: Boca Raton : Taylor & Francis, CRC Press, 2017Description: 1 online resource.Content type: text Media type: computer Carrier type: online resourceISBN: 9781351648059; 1351648055; 9781315152011; 1315152010; 9781498747141; 1498747140; 9781351638524; 1351638521.Subject(s): Semiconductors -- Handbooks, manuals, etc | Gallium nitride -- Handbooks, manuals, etcDDC classification: 621.3815/2 Online resources: Taylor & Francis View this book online, both on- and off-campus (please use Desktop Anywhere for off-campus access) | Taylor & Francis Click here to view. | OCLC metadata license agreement
Contents:
""Cover""; ""Half Title ""; ""Title Page ""; ""Copyright Page ""; ""Table of Contents ""; ""Series Preface ""; ""Foreword ""; ""Preface ""; ""Editors ""; ""Contributors ""; ""Section I: Fundamentals ""; ""1: III-Nitride Materials and Characterization ""
""2: Microstructure and Polarization Properties of III-Nitride Semiconductors """"3: Optical Properties of III-Nitride Semiconductors ""; ""4: Electronic and Transport Properties of III-Nitride Semiconductors ""; ""Section II: Growth and Processing ""
""5: Growth Technology for GaN and AlN Bulk Substrates and Templates """"6: III-Nitride Metalorganic Vapor-Phase Epitaxy ""; ""7: Molecular Beam Epitaxial Growth of III-Nitride Nanowire Heterostructures and Emerging Device Applications ""; ""8: Advanced Optoelectronic Device Processing ""
""Section III: Power Electronics """"9: Principles and Properties of Nitride-Based Electronic Devices ""; ""10: Power Conversion and the Role of GaN ""; ""11: Recent Progress in GaN-on-Si HEMT ""; ""12: Reliability in III-Nitride Devices ""; ""Section IV: Light Emitters ""
""13: Internal Quantum Efficiency for III-Nitrideâ#x80;#x93;Based Blue Light-Emitting Diodes """"14: White Light-Emitting Diode: Fundamentals, Current Status, and Future Trends ""; ""15: Current Status and Trends for Green Light-Emitting Diodes ""
Scope and content: "This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics.Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China.Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA.Bo Shen is the Cheung Kong Professor at Peking University in China. "--Provided by publisher.
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""Cover""; ""Half Title ""; ""Title Page ""; ""Copyright Page ""; ""Table of Contents ""; ""Series Preface ""; ""Foreword ""; ""Preface ""; ""Editors ""; ""Contributors ""; ""Section I: Fundamentals ""; ""1: III-Nitride Materials and Characterization ""

""2: Microstructure and Polarization Properties of III-Nitride Semiconductors """"3: Optical Properties of III-Nitride Semiconductors ""; ""4: Electronic and Transport Properties of III-Nitride Semiconductors ""; ""Section II: Growth and Processing ""

""5: Growth Technology for GaN and AlN Bulk Substrates and Templates """"6: III-Nitride Metalorganic Vapor-Phase Epitaxy ""; ""7: Molecular Beam Epitaxial Growth of III-Nitride Nanowire Heterostructures and Emerging Device Applications ""; ""8: Advanced Optoelectronic Device Processing ""

""Section III: Power Electronics """"9: Principles and Properties of Nitride-Based Electronic Devices ""; ""10: Power Conversion and the Role of GaN ""; ""11: Recent Progress in GaN-on-Si HEMT ""; ""12: Reliability in III-Nitride Devices ""; ""Section IV: Light Emitters ""

""13: Internal Quantum Efficiency for III-Nitrideâ#x80;#x93;Based Blue Light-Emitting Diodes """"14: White Light-Emitting Diode: Fundamentals, Current Status, and Future Trends ""; ""15: Current Status and Trends for Green Light-Emitting Diodes ""

"This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics.Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China.Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA.Bo Shen is the Cheung Kong Professor at Peking University in China. "--Provided by publisher.

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