000 00385nam a2200145Ia 4500
008 190711s9999 xx 000 0 und d
020 _a9814126942
082 _a621.38175 G411
100 _aGHANDHI, S K
245 0 _aVLSI FABRICATION PRINCIPLES:SILICON AND GALLIUM ARSENIDE
250 _a2
260 _aNEW YORK
_bWiley
_c2003
300 _axxiv+834p., 23X15Cms
942 _cBK
_2DDC
999 _c29892
_d29892