000			03275nam a22005175i 4500
001			978-3-319-27192-7
003			DE-He213
005			20200420220226.0
007			cr nn 008mamaa
008			151229s2016 gw | s |||| 0|eng d
020			_a9783319271927 _9978-3-319-27192-7
024	7		_a10.1007/978-3-319-27192-7 _2doi
050		4	_aTK7888.4
072		7	_aTJFC _2bicssc
072		7	_aTEC008010 _2bisacsh
082	0	4	_a621.3815 _223
100	1		_aCorreia, Ana Paula Pinto. _eauthor.
245	1	2	_aA Second-Order (SVE(B ADC Using Sputtered IGZO TFTs _h[electronic resource] / _cby Ana Paula Pinto Correia, Pedro Miguel C�andido Barquinha, Jo�ao Carlos da Palma Goes.
264		1	_aCham : _bSpringer International Publishing : _bImprint: Springer, _c2016.
300			_aXIV, 75 p. 54 illus., 12 illus. in color. _bonline resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
347			_atext file _bPDF _2rda
490	1		_aSpringerBriefs in Electrical and Computer Engineering, _x2191-8112
505	0		_aIntroduction -- Thin-film transistors -- Oxide TFTs @ FCT-UNL -- Analog-to-digital converters -- A 2nd-order ∑∆ ADC with oxide TFTs @ FCT-UNL -- Conclusions and Future Perspectives.-.
520			_aThis book discusses the design, electrical simulation and layout of a 2nd-order ∑∆ analog-to-digital converter (ADC), using oxide thin-film transistors (TFTs) technology. The authors provide a unified view of materials science and electronics engineering, in order to guide readers from both fields through key topics. To accomplish this goal, background regarding materials, device physics, characterization techniques, circuit design and layout is given together with a detailed discussion of experimental data. The final simulation results clearly demonstrate the potential of the proposed circuit-level techniques, which enables the implementation of robust and energy efficient ADCs based on oxide TFTs, for moderate resolutions and conversion-rates. Combines materials science and electronics engineering in the same book, making it possible to obtain a general overview, from TFTs production and characterization to their integration in relatively complex circuits; Adapts an a-Si:H TFT RPI model to simulate the behavior of these devices with good fitting to experimental data; Describes the implementation of a 2nd-order ∑∆ ADC using oxide TFTs.
650		0	_aEngineering.
650		0	_aElectronic circuits.
650		0	_aElectronics.
650		0	_aMicroelectronics.
650	1	4	_aEngineering.
650	2	4	_aCircuits and Systems.
650	2	4	_aElectronic Circuits and Devices.
650	2	4	_aElectronics and Microelectronics, Instrumentation.
700	1		_aC�andido Barquinha, Pedro Miguel. _eauthor.
700	1		_aGoes, Jo�ao Carlos da Palma. _eauthor.
710	2		_aSpringerLink (Online service)
773	0		_tSpringer eBooks
776	0	8	_iPrinted edition: _z9783319271903
830		0	_aSpringerBriefs in Electrical and Computer Engineering, _x2191-8112
856	4	0	_uhttp://dx.doi.org/10.1007/978-3-319-27192-7
912			_aZDB-2-ENG
942			_cEBK
999			_c52183 _d52183