000 03943nam a22005055i 4500
001 978-3-319-08078-9
003 DE-He213
005 20200420221255.0
007 cr nn 008mamaa
008 140806s2015 gw | s |||| 0|eng d
020 _a9783319080789
_9978-3-319-08078-9
024 7 _a10.1007/978-3-319-08078-9
_2doi
050 4 _aTK7800-8360
050 4 _aTK7874-7874.9
072 7 _aTJF
_2bicssc
072 7 _aTEC008000
_2bisacsh
072 7 _aTEC008070
_2bisacsh
082 0 4 _a621.381
_223
100 1 _aLevinzon, Felix.
_eauthor.
245 1 0 _aPiezoelectric Accelerometers with Integral Electronics
_h[electronic resource] /
_cby Felix Levinzon.
264 1 _aCham :
_bSpringer International Publishing :
_bImprint: Springer,
_c2015.
300 _aXV, 169 p. 99 illus., 37 illus. in color.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
505 0 _aIntroduction to Piezoelectric Accelerometers with Integral Electronics -- Piezoelectric Transducers Used for Piezoelectric Accelerometers with Integral Electronics -- Integral FET Amplifiers Used for IEPE Accelerometers -- Noise of a FET Amplifier -- Comparison of 1/f Noise and Thermal Noise in JFETs and MOSFETs -- Fundamental Noise Limit of an IEPE Accelerometer -- Noise of and IEPE Accelerometer -- Ultra-low-noise IEPE Seismic Accelerometers -- High-temperature, up to 175 ºC, Miniature IEPE Accelerometers.
520 _aThis book provides an invaluable reference to Piezoelectric Accelerometers with Integral Electronics (IEPE). It describes the design and performance parameters of IEPE accelerometers and their key elements, PE transducers and FET-input amplifiers. Coverage includes recently designed, low-noise and high temperature IEPE accelerometers. Readers will benefit from the detailed noise analysis of the IEPE accelerometer, which enables estimation of its noise floor and noise limits. Other topics  useful for designers of low-noise, high temperature silicon-based electronics include noise analysis of FET amplifiers, experimental investigation and comparison of low-frequency noise in different JFETs and MOSFETs, and ultra-low-noise JFETs (at level of 0.6 nV/√Hz). The discussion also includes ultra-low-noise (at level of 3 ng/√Hz) seismic IEPE accelerometers and high temperature (up to 175� C) triaxial and single axis miniature IEPE accelerometers, along with key factors for their design. • Provides a comprehensive reference to the design and performance of IEPE accelerometers, including low-noise and high temperature IEPE sensors; • Includes noise analysis of the IEPE accelerometer, which enables estimation of the its noise floor and noise limits; • Describes recently design of ultra-low-noise (at level of 3 ng/√Hz) IEPE seismic accelerometers and high temperature (up to 175� C) triaxial and single axis miniature IEPE accelerometers; • Compares low-frequency noise in different JFETs and MOSFETs including measurement results of ultra-low-noise (at level of 0.6 nV/√Hz) JFET; • Presents key factors for design of low-noise and high temperature IEPE accelerometer and their electronics.
650 0 _aEngineering.
650 0 _aMechanical engineering.
650 0 _aElectronics.
650 0 _aMicroelectronics.
650 0 _aElectronic circuits.
650 1 4 _aEngineering.
650 2 4 _aElectronics and Microelectronics, Instrumentation.
650 2 4 _aCircuits and Systems.
650 2 4 _aMechanical Engineering.
710 2 _aSpringerLink (Online service)
773 0 _tSpringer eBooks
776 0 8 _iPrinted edition:
_z9783319080772
856 4 0 _uhttp://dx.doi.org/10.1007/978-3-319-08078-9
912 _aZDB-2-ENG
942 _cEBK
999 _c52844
_d52844