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001 978-3-662-48681-8
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007 cr nn 008mamaa
008 160112s2016 gw | s |||| 0|eng d
020 _a9783662486818
_9978-3-662-48681-8
024 7 _a10.1007/978-3-662-48681-8
_2doi
050 4 _aTK7876-7876.42
072 7 _aTJFN
_2bicssc
072 7 _aTEC024000
_2bisacsh
072 7 _aTEC030000
_2bisacsh
082 0 4 _a621.3
_223
100 1 _aSun, Jiandong.
_eauthor.
245 1 0 _aField-effect Self-mixing Terahertz Detectors
_h[electronic resource] /
_cby Jiandong Sun.
250 _a1st ed. 2016.
264 1 _aBerlin, Heidelberg :
_bSpringer Berlin Heidelberg :
_bImprint: Springer,
_c2016.
300 _aXVIII, 126 p. 84 illus., 4 illus. in color.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aSpringer Theses, Recognizing Outstanding Ph.D. Research,
_x2190-5053
505 0 _aIntroduction -- Field-Effect Self-Mixing Mechanism and Detector Model -- Realization of Terahertz Self-Mixing Detectors Based on AlGaN/GaN HEMT -- Realization of Resonant Plasmon Excitation and Detection -- Scanning Near-Field Probe for Antenna Characterization -- Applications -- Conclusions and Outlook.
520 _aA comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.
650 0 _aEngineering.
650 0 _aSolid state physics.
650 0 _aSemiconductors.
650 0 _aMicrowaves.
650 0 _aOptical engineering.
650 1 4 _aEngineering.
650 2 4 _aMicrowaves, RF and Optical Engineering.
650 2 4 _aOptics, Lasers, Photonics, Optical Devices.
650 2 4 _aSemiconductors.
650 2 4 _aSolid State Physics.
710 2 _aSpringerLink (Online service)
773 0 _tSpringer eBooks
776 0 8 _iPrinted edition:
_z9783662486795
830 0 _aSpringer Theses, Recognizing Outstanding Ph.D. Research,
_x2190-5053
856 4 0 _uhttp://dx.doi.org/10.1007/978-3-662-48681-8
912 _aZDB-2-ENG
942 _cEBK
999 _c54532
_d54532