000 03461nam a22005775i 4500
001 978-3-7091-1800-9
003 DE-He213
005 20200421111653.0
007 cr nn 008mamaa
008 140705s2014 au | s |||| 0|eng d
020 _a9783709118009
_9978-3-7091-1800-9
024 7 _a10.1007/978-3-7091-1800-9
_2doi
050 4 _aTK7800-8360
050 4 _aTK7874-7874.9
072 7 _aTJF
_2bicssc
072 7 _aTEC008000
_2bisacsh
072 7 _aTEC008070
_2bisacsh
082 0 4 _a621.381
_223
100 1 _aPourfath, Mahdi.
_eauthor.
245 1 4 _aThe Non-Equilibrium Green's Function Method for Nanoscale Device Simulation
_h[electronic resource] /
_cby Mahdi Pourfath.
264 1 _aVienna :
_bSpringer Vienna :
_bImprint: Springer,
_c2014.
300 _aXVII, 256 p. 78 illus., 31 illus. in color.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aComputational Microelectronics,
_x0179-0307
505 0 _aReview of quantum mechanics -- Review of statistical mechanics -- Green's function formalism -- Implementation -- Applications -- Non-interacting Green's functions -- Feynman diagrams -- Variational derivation of self-energies.
520 _aFor modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical methods for solving the kinetic equations at a reasonable computational time. In this book the required concepts from quantum and statistical mechanics and numerical methods for calculating Green functions are presented. The Green function is studied in detail for systems both under equilibrium and under nonequilibrium conditions. Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated. All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies, and scattering self-energies, are examined and efficient methods for their evaluation are explained. Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires, and low-dimensional thermoelectric devices and photodetectors are discussed.
650 0 _aEngineering.
650 0 _aComputer-aided engineering.
650 0 _aNanoscale science.
650 0 _aNanoscience.
650 0 _aNanostructures.
650 0 _aNanotechnology.
650 0 _aElectronics.
650 0 _aMicroelectronics.
650 1 4 _aEngineering.
650 2 4 _aElectronics and Microelectronics, Instrumentation.
650 2 4 _aNanoscale Science and Technology.
650 2 4 _aNanotechnology and Microengineering.
650 2 4 _aComputer-Aided Engineering (CAD, CAE) and Design.
710 2 _aSpringerLink (Online service)
773 0 _tSpringer eBooks
776 0 8 _iPrinted edition:
_z9783709117996
830 0 _aComputational Microelectronics,
_x0179-0307
856 4 0 _uhttp://dx.doi.org/10.1007/978-3-7091-1800-9
912 _aZDB-2-ENG
942 _cEBK
999 _c54553
_d54553