000 | 03168nam a22005775i 4500 | ||
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001 | 978-1-4614-6822-6 | ||
003 | DE-He213 | ||
005 | 20200421111655.0 | ||
007 | cr nn 008mamaa | ||
008 | 130423s2013 xxu| s |||| 0|eng d | ||
020 |
_a9781461468226 _9978-1-4614-6822-6 |
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024 | 7 |
_a10.1007/978-1-4614-6822-6 _2doi |
|
050 | 4 | _aTK7800-8360 | |
050 | 4 | _aTK7874-7874.9 | |
072 | 7 |
_aTJF _2bicssc |
|
072 | 7 |
_aTEC008000 _2bisacsh |
|
072 | 7 |
_aTEC008070 _2bisacsh |
|
082 | 0 | 4 |
_a621.381 _223 |
100 | 1 |
_aChaudhry, Amit. _eauthor. |
|
245 | 1 | 0 |
_aFundamentals of Nanoscaled Field Effect Transistors _h[electronic resource] / _cby Amit Chaudhry. |
264 | 1 |
_aNew York, NY : _bSpringer New York : _bImprint: Springer, _c2013. |
|
300 |
_aXIV, 201 p. 121 illus., 102 illus. in color. _bonline resource. |
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336 |
_atext _btxt _2rdacontent |
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337 |
_acomputer _bc _2rdamedia |
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338 |
_aonline resource _bcr _2rdacarrier |
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347 |
_atext file _bPDF _2rda |
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505 | 0 | _aScaling of a MOS Transistor -- Nanoscale Effects- Gate Oxide Leakage Currents -- Nanoscale Effects- Inversion Layer Quantization -- Dielectrics for Nanoelectronics -- Germanium Technology -- Biaxial s-Si Technology -- Uniaxial s-Si Technology -- Alternate MOS Structures -- Graphene Technology. | |
520 | _aFundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-(Sm(B technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book. In summary, this book: Covers the fundamental principles behind nanoelectronics/microelectronics Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale Provides some case studies to understand the issue mathematically Fundamentals of Nanoscaled Field Effect Transistors is an ideal book for researchers and undergraduate and graduate students in the field of microelectronics, nanoelectronics, and electronics. | ||
650 | 0 | _aEngineering. | |
650 | 0 | _aNanoscale science. | |
650 | 0 | _aNanoscience. | |
650 | 0 | _aNanostructures. | |
650 | 0 | _aElectronic circuits. | |
650 | 0 | _aElectronics. | |
650 | 0 | _aMicroelectronics. | |
650 | 0 | _aOptical materials. | |
650 | 0 | _aElectronic materials. | |
650 | 1 | 4 | _aEngineering. |
650 | 2 | 4 | _aElectronics and Microelectronics, Instrumentation. |
650 | 2 | 4 | _aElectronic Circuits and Devices. |
650 | 2 | 4 | _aCircuits and Systems. |
650 | 2 | 4 | _aNanoscale Science and Technology. |
650 | 2 | 4 | _aOptical and Electronic Materials. |
710 | 2 | _aSpringerLink (Online service) | |
773 | 0 | _tSpringer eBooks | |
776 | 0 | 8 |
_iPrinted edition: _z9781461468219 |
856 | 4 | 0 | _uhttp://dx.doi.org/10.1007/978-1-4614-6822-6 |
912 | _aZDB-2-ENG | ||
942 | _cEBK | ||
999 |
_c54637 _d54637 |