000 | 03299nam a22005295i 4500 | ||
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001 | 978-3-319-07611-9 | ||
003 | DE-He213 | ||
005 | 20200421112547.0 | ||
007 | cr nn 008mamaa | ||
008 | 140821s2015 gw | s |||| 0|eng d | ||
020 |
_a9783319076119 _9978-3-319-07611-9 |
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024 | 7 |
_a10.1007/978-3-319-07611-9 _2doi |
|
050 | 4 | _aTK7888.4 | |
072 | 7 |
_aTJFC _2bicssc |
|
072 | 7 |
_aTEC008010 _2bisacsh |
|
082 | 0 | 4 |
_a621.3815 _223 |
100 | 1 |
_aSalah, Khaled. _eauthor. |
|
245 | 1 | 0 |
_aArbitrary Modeling of TSVs for 3D Integrated Circuits _h[electronic resource] / _cby Khaled Salah, Yehea Ismail, Alaa El-Rouby. |
264 | 1 |
_aCham : _bSpringer International Publishing : _bImprint: Springer, _c2015. |
|
300 |
_aIX, 179 p. 159 illus., 99 illus. in color. _bonline resource. |
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336 |
_atext _btxt _2rdacontent |
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337 |
_acomputer _bc _2rdamedia |
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338 |
_aonline resource _bcr _2rdacarrier |
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347 |
_atext file _bPDF _2rda |
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490 | 1 |
_aAnalog Circuits and Signal Processing, _x1872-082X |
|
505 | 0 | _aIntroduction: Work around Moore's Law -- 3D/TSV Enabling Technologies -- TSV Modeling and Analysis -- TSV Verification -- TSV Macro-Modeling Framework -- TSV Design Applications: TSV-Based On-Chip Spiral Inductor, TSV-Based On-Chip Wireless Communications and TSV-Based Bandpass Filter -- Imperfection in TSV Modeling -- New Trends in TSV -- TSV Fabrication -- Conclusions. | |
520 | _aThis book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance, and nearby contact effects.  Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis, and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor,  and inductive-based communication system, and bandpass filtering. �Introduces a robust model that captures accurately all the loss modes of a TSV,  coupling parasitics between TSVs and the TSV nonlinear capacitance and resistance of the depletion region; �Enables readers to use a model which is technology dependent and can be used for any TSV configuration; �Reveals a novel on-chip wireless communication technique, based on TSV spiral inductors; �Equips readers for fast parasitic extraction of TSVs for 3D IC design. | ||
650 | 0 | _aEngineering. | |
650 | 0 | _aMicroprocessors. | |
650 | 0 | _aElectronics. | |
650 | 0 | _aMicroelectronics. | |
650 | 0 | _aElectronic circuits. | |
650 | 1 | 4 | _aEngineering. |
650 | 2 | 4 | _aCircuits and Systems. |
650 | 2 | 4 | _aElectronics and Microelectronics, Instrumentation. |
650 | 2 | 4 | _aProcessor Architectures. |
700 | 1 |
_aIsmail, Yehea. _eauthor. |
|
700 | 1 |
_aEl-Rouby, Alaa. _eauthor. |
|
710 | 2 | _aSpringerLink (Online service) | |
773 | 0 | _tSpringer eBooks | |
776 | 0 | 8 |
_iPrinted edition: _z9783319076102 |
830 | 0 |
_aAnalog Circuits and Signal Processing, _x1872-082X |
|
856 | 4 | 0 | _uhttp://dx.doi.org/10.1007/978-3-319-07611-9 |
912 | _aZDB-2-ENG | ||
942 | _cEBK | ||
999 |
_c58608 _d58608 |