000 | 03206nam a22005295i 4500 | ||
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001 | 978-1-4614-7909-3 | ||
003 | DE-He213 | ||
005 | 20200421112556.0 | ||
007 | cr nn 008mamaa | ||
008 | 131022s2014 xxu| s |||| 0|eng d | ||
020 |
_a9781461479093 _9978-1-4614-7909-3 |
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024 | 7 |
_a10.1007/978-1-4614-7909-3 _2doi |
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050 | 4 | _aTK7888.4 | |
072 | 7 |
_aTJFC _2bicssc |
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072 | 7 |
_aTEC008010 _2bisacsh |
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082 | 0 | 4 |
_a621.3815 _223 |
245 | 1 | 0 |
_aBias Temperature Instability for Devices and Circuits _h[electronic resource] / _cedited by Tibor Grasser. |
264 | 1 |
_aNew York, NY : _bSpringer New York : _bImprint: Springer, _c2014. |
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300 |
_aXI, 810 p. 601 illus., 318 illus. in color. _bonline resource. |
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336 |
_atext _btxt _2rdacontent |
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337 |
_acomputer _bc _2rdamedia |
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338 |
_aonline resource _bcr _2rdacarrier |
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347 |
_atext file _bPDF _2rda |
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505 | 0 | _aIntroduction -- Characterization, Experimental Challenges -- Advanced Characterization -- Characterization of Nanoscale Devices -- Statistical Properties/Variability -- Theoretical Understanding -- Possible Defects: Experimental -- Possible Defects: First Principles -- Modeling -- Technological Impact -- Silicon dioxides/SiON -- High-k oxides -- Alternative technologies -- Circuits. | |
520 | _aThis book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability.  Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.  �         Enables readers to understand and model negative bias temperature instability, with an emphasis on dynamics; �         Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence; �         Explains time dependent defect spectroscopy, as a measurement method that operates on nanoscale MOSFETs; �         Introduces new defect model for metastable defect states, nonradiative multiphonon theory and stochastic behavior. | ||
650 | 0 | _aEngineering. | |
650 | 0 | _aSemiconductors. | |
650 | 0 | _aQuality control. | |
650 | 0 | _aReliability. | |
650 | 0 | _aIndustrial safety. | |
650 | 0 | _aElectronics. | |
650 | 0 | _aMicroelectronics. | |
650 | 0 | _aElectronic circuits. | |
650 | 1 | 4 | _aEngineering. |
650 | 2 | 4 | _aCircuits and Systems. |
650 | 2 | 4 | _aSemiconductors. |
650 | 2 | 4 | _aElectronics and Microelectronics, Instrumentation. |
650 | 2 | 4 | _aQuality Control, Reliability, Safety and Risk. |
700 | 1 |
_aGrasser, Tibor. _eeditor. |
|
710 | 2 | _aSpringerLink (Online service) | |
773 | 0 | _tSpringer eBooks | |
776 | 0 | 8 |
_iPrinted edition: _z9781461479086 |
856 | 4 | 0 | _uhttp://dx.doi.org/10.1007/978-1-4614-7909-3 |
912 | _aZDB-2-ENG | ||
942 | _cEBK | ||
999 |
_c59161 _d59161 |