| 000 | 05772nam a2200961 i 4500 | ||
|---|---|---|---|
| 001 | 5201823 | ||
| 003 | IEEE | ||
| 005 | 20200421114109.0 | ||
| 006 | m o d | ||
| 007 | cr |n||||||||| | ||
| 008 | 040320s2004 njua ob 001 eng d | ||
| 010 | _z 2003057676 (print) | ||
| 020 |
_a9780471667209 _qelectronic |
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| 020 |
_z047144653X _qpaper |
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| 020 |
_z047166720X _qelectronic |
||
| 020 |
_z9780471446538 _qprint |
||
| 024 | 7 |
_a10.1002/047166720X _2doi |
|
| 035 | _a(CaBNVSL)mat05201823 | ||
| 035 | _a(IDAMS)0b0000648104ad8b | ||
| 040 |
_aCaBNVSL _beng _erda _cCaBNVSL _dCaBNVSL |
||
| 050 | 4 |
_aTK7871.9 _b.S56 2004eb |
|
| 082 | 0 | 4 |
_a621.39/732 _222 |
| 100 | 1 |
_aSingh, Raminderpal, _eauthor. |
|
| 245 | 1 | 0 |
_aSilicon germanium : _btechnology, modeling, and design / _cRaminderpal Singh, David Harame, Modest M. Oprysko. |
| 264 | 1 |
_aPiscataway, New Jersey : _bIEEE Press, _c2004. |
|
| 264 | 2 |
_a[Piscataqay, New Jersey] : _bIEEE Xplore, _c[2004] |
|
| 300 |
_a1 PDF (xxviii, 340 pages) : _billustrations. |
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| 336 |
_atext _2rdacontent |
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| 337 |
_aelectronic _2isbdmedia |
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| 338 |
_aonline resource _2rdacarrier |
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| 504 | _aIncludes bibliographical references and index. | ||
| 505 | 0 | _aContributors. -- Foreword. -- Preface. -- Acknowledgments. -- Introduction. -- A Historical Perspective at IBM. -- Technology Development. -- Modeling and Characterization. -- Design Automation and Signal Integrity. -- Leading-Edge Applications. -- Appendix. -- Index. -- About the Authors. -- | |
| 506 | 1 | _aRestricted to subscribers or individual electronic text purchasers. | |
| 520 | _a"An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications." -Ron Wilson, EETimes "SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it." -Alberto Sangiovanni-Vincentelli Professor, University of California, Berkeley Cofounder, Chief Technology Officer, Member of Board Cadence Design Systems Inc. Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM's SiGe technology, this comprehensive guide quickly moves on to: * Detail many of IBM's SiGe technology development programs * Explore IBM's approach to device modeling and characterization-including predictive TCAD modeling * Discuss IBM's design automation and signal integrity knowledge and implementation methodologies * Illustrate design applications in a variety of IBM's SiGe technologies * Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design Written for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed-signal products, and illustrates in-depth applications that can be implemented using IBM's advanced SiGe process technologies and design kits. "This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development." -Ron Wilson Silicon Engineering Editor, EETimes "This book chronicles the development of SiGe in detail, provides an in-depth look at the modeling and design automation requirements for making advanced applications using SiGe possible, and illustrates such applications as implemented using IBM's process technologies and design methods." -John Kelly Senior Vice President and Group Executive, Technology Group, IBM. | ||
| 530 | _aAlso available in print. | ||
| 538 | _aMode of access: World Wide Web | ||
| 550 | _aMade available online by Ebrary. | ||
| 588 | _aTitle from title screen (viewed Aug. 17, 2004). | ||
| 588 | _aDescription based on PDF viewed 12/21/2015. | ||
| 650 | 0 | _aSilicon. | |
| 650 | 0 | _aGermanium. | |
| 655 | 0 | _aElectronic books. | |
| 695 | _aBiCMOS integrated circuits | ||
| 695 | _aBiographies | ||
| 695 | _aBoron | ||
| 695 | _aCMOS integrated circuits | ||
| 695 | _aCMOS technology | ||
| 695 | _aClocks | ||
| 695 | _aComputational modeling | ||
| 695 | _aDesign automation | ||
| 695 | _aElectrostatic discharge | ||
| 695 | _aEpitaxial growth | ||
| 695 | _aFETs | ||
| 695 | _aHafnium | ||
| 695 | _aHeterojunction bipolar transistors | ||
| 695 | _aImpurities | ||
| 695 | _aIndexes | ||
| 695 | _aIntegrated circuit interconnections | ||
| 695 | _aIntegrated circuit modeling | ||
| 695 | _aJitter | ||
| 695 | _aLayout | ||
| 695 | _aMetals | ||
| 695 | _aPerformance evaluation | ||
| 695 | _aPhase locked loops | ||
| 695 | _aPredictive models | ||
| 695 | _aRadio frequency | ||
| 695 | _aResistors | ||
| 695 | _aSONET | ||
| 695 | _aSemiconductor device modeling | ||
| 695 | _aSemiconductor process modeling | ||
| 695 | _aSilicon | ||
| 695 | _aSilicon germanium | ||
| 695 | _aSolid modeling | ||
| 695 | _aTransistors | ||
| 695 | _aVoltage-controlled oscillators | ||
| 700 | 1 |
_aOprysko, Modest Michael, _d1957- |
|
| 700 | 1 | _aHarame, David Louis. | |
| 710 | 2 |
_aIEEE Xplore (Online Service), _edistributor. |
|
| 710 | 2 |
_aJohn Wiley & Sons, _epublisher. |
|
| 776 | 0 | 8 |
_iPrint version: _z9780471446538 |
| 856 | 4 | 2 |
_3Abstract with links to resource _uhttp://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=5201823 |
| 942 | _cEBK | ||
| 999 |
_c59275 _d59275 |
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