000 05937nam a2201345 i 4500
001 5265897
003 IEEE
005 20200421114115.0
006 m o d
007 cr |n|||||||||
008 100317t20152000nyua ob 001 0 eng d
020 _a9780470544105
_qelectronic
020 _z9780780334793
_qprint
020 _z0470544104
_qelectronic
024 7 _a10.1109/9780470544105
_2doi
035 _a(CaBNVSL)mat05265897
035 _a(IDAMS)0b000064810c5a80
040 _aCaBNVSL
_beng
_erda
_cCaBNVSL
_dCaBNVSL
050 4 _aTK7871.85
_b.H475 2000eb
082 0 4 _a621.3815/2
_222
100 1 _aHess, Karl,
_d1945-
245 1 0 _aAdvanced theory of semiconductor devices /
_cKarl Hess.
264 1 _aNew York :
_bIEEE Press,
_cc2000.
264 2 _a[Piscataqay, New Jersey] :
_bIEEE Xplore,
_c[2009]
300 _a1 PDF (xv, 332 pages) :
_billustrations.
336 _atext
_2rdacontent
337 _aelectronic
_2isbdmedia
338 _aonline resource
_2rdacarrier
504 _aIncludes bibliographical references.
505 0 _aPreface. Acknowledgments. A Brief Review of the Basic Equations. The Symmetry of the Crystal Lattice. The Theory of Energy Bands in Crystals. Imperfections of Ideal Crystal Structure. Equilibrium Statistics for Electrons and Holes. Self-Consistent Potentials and Dielectric Properties. Scattering Theory. The Boltzmann Transport Equation. Generation-Recombination. The Heterojunction Barrier. The Device Equations of Shockley and Stratton. Numerical Device Simulations. Diodes. Laser Diodes. Transistors. Future Semiconductor Devices. Appendix A: Tunneling and the Golden Rule. Appendix B: The One Band Approximation. Appendix C: Temperature Dependence of the Band Structure. Appendix D: Hall Effect and Magnetoresistance. Appendix E: The Power Balance Equation. Appendix F: The Self-Consistent Potential at a Heterojunction. Appendix G: Schottky Barrier Transport. Index. About the Author.
506 1 _aRestricted to subscribers or individual electronic text purchasers.
520 _aSemiconductor devices are ubiquitous in today's world and found increasingly in cars, kitchens, and electronic door looks, attesting to their presence in our daily lives. This comprehensive book brings you the fundamentals of semiconductor device theory from basic quantum physics to computer aided design. Advanced Theory of Semiconductor Devices will help improve your understanding of computer simulation devices through a thorough discussion of basic equations, their validity, and numerical solutions as they are contained in current simulation tools. You will gain state-of-the-art knowledge of devices used in both III-V compounds and silicon technology. Specially featured are novel approaches and explanations of electronic transport, particularly in p-n junction diodes. Close attention is also given to innovative treatments of quantum level laser diodes and hot electron effects in silicon technology. This in-depth book is designed expressly for graduate students, research scientists, and research engineers in solid state electronics who want to gain a better grasp of the principles underlying semiconductor devices.
530 _aAlso available in print.
538 _aMode of access: World Wide Web
588 _aDescription based on PDF viewed 12/21/2015.
650 0 _aSemiconductors.
655 0 _aElectronic books.
695 _aApproximation methods
695 _aAtomic measurements
695 _aBiographies
695 _aBoltzmann equation
695 _aCharge carrier processes
695 _aCoils
695 _aCompounds
695 _aComputational modeling
695 _aConductivity
695 _aCrystals
695 _aCurrent density
695 _aDielectrics
695 _aDiode lasers
695 _aDistribution functions
695 _aDoping
695 _aEffective mass
695 _aEigenvalues and eigenfunctions
695 _aElectric fields
695 _aElectric potential
695 _aEllipsoids
695 _aEnergy loss
695 _aEnergy states
695 _aEquations
695 _aFinite element methods
695 _aForce
695 _aGallium arsenide
695 _aHall effect
695 _aHeterojunctions
695 _aImpurities
695 _aIndexes
695 _aJunctions
695 _aLattices
695 _aLight sources
695 _aMagnetic fields
695 _aMagnetoresistance
695 _aMaterials
695 _aMathematical model
695 _aMetals
695 _aMoment methods
695 _aNearest neighbor searches
695 _aP-n junctions
695 _aPhonons
695 _aPhysics
695 _aPoisson equations
695 _aPotential energy
695 _aQuantum capacitance
695 _aQuantum mechanics
695 _aRadiative recombination
695 _aRegions
695 _aResistance
695 _aScattering
695 _aSchottky barriers
695 _aSchottky diodes
695 _aSchrodinger equation
695 _aSemiconductor devices
695 _aSemiconductor process modeling
695 _aSilicon
695 _aSolids
695 _aSpontaneous emission
695 _aSteady-state
695 _aSurface contamination
695 _aSurface emitting lasers
695 _aSurface reconstruction
695 _aTaylor series
695 _aTemperature
695 _aTemperature dependence
695 _aThermionic emission
695 _aTransistors
695 _aTunneling
695 _aVibrations
695 _aVideo recording
695 _aWave functions
710 2 _aJohn Wiley & Sons,
_epublisher.
710 2 _aIEEE Xplore (Online service),
_edistributor.
776 0 8 _iPrint version:
_z9780780334793
856 4 2 _3Abstract with links to resource
_uhttp://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=5265897
942 _cEBK
999 _c59515
_d59515