| 000 | 10152nam a2202197 i 4500 | ||
|---|---|---|---|
| 001 | 6558560 | ||
| 003 | IEEE | ||
| 005 | 20200421114528.0 | ||
| 006 | m o d | ||
| 007 | cr |n||||||||| | ||
| 008 | 151222s2013 njua ob 001 eng d | ||
| 010 | _z 2007001281 (print) | ||
| 015 | _zGBA6A5950 (print) | ||
| 016 | _z013629291 (print) | ||
| 020 |
_a9781118678107 _qelectronic |
||
| 020 |
_z9781118442166 _qprint |
||
| 020 |
_z9780470081464 _qpaper |
||
| 020 |
_z0470081465 _qpaper |
||
| 024 | 7 |
_a10.1002/9781118678107 _2doi |
|
| 035 | _a(CaBNVSL)mat06558560 | ||
| 035 | _a(IDAMS)0b00006481dc6f24 | ||
| 040 |
_aCaBNVSL _beng _erda _cCaBNVSL _dCaBNVSL |
||
| 050 | 4 |
_aT174.7 _b.F86 2007eb |
|
| 082 | 0 | 0 |
_a621.381 _222 |
| 111 | 2 |
_aFTM-5 _d(2006 : _cCrete, Greece) |
|
| 245 | 1 | 0 |
_aFuture trends in microelectronics : _bup the nano creek / _cedited by Serge Luryi, Jimmy Xu, Alex Zaslavsky. |
| 264 | 1 |
_aHoboken, New Jersey : _bWiley-Interscience, _cc2007. |
|
| 264 | 2 |
_a[Piscataqay, New Jersey] : _bIEEE Xplore, _c[2013] |
|
| 300 |
_a1 PDF (xiv, 459 pages) : _billustrations. |
||
| 336 |
_atext _2rdacontent |
||
| 337 |
_aelectronic _2isbdmedia |
||
| 338 |
_aonline resource _2rdacarrier |
||
| 500 | _a"This book is a brainchild of the fifth workshop in the Future Trends in Microelectronics series (FTM-5) ... on Crete, Greece, in June of 2006"--Pref. | ||
| 504 | _aIncludes bibliographical references and index. | ||
| 505 | 0 | _aPreface ix / S. Luryi, J. M. Xu and A Zaslavsky -- I INNOVATIONS IN ELECTRONICS AND SYSTEMS 1 -- Technology Innovation, Reshaping the Microelectronics Industry 4 / K. Kim and U.-I. Chung -- Challenges and Limits for Very Low Energy Computation 49 / F. Balestra -- Getting Rid of the DRAM Capacitor 59 / N. Rodriguez, F. Gamiz and S. Cristoloveanu -- Physics and Design of Nanoscale Field Effect Diodes for Memory and ESD Protection Applications 73 / D. E. Ioannou, Z. Chbili, A. Z. Badwan, Q. Li, Y. Yang and A. A. Salman -- Sharp-Switching CMOS-Compatible Devices with High Current Drive 81 / J. Wan, S. Cristoloveanu, S. T. Le, A. Zaslavsky, C. Le Royer, S. A. Dayeh, D. E. Perea and S. T. Picraux -- Magnetic Tunnel Junctions with a Composite Free layer: A New Concept for Future Universal memory 93 / A. Makarov, V. Sverdlov and S. Selberherr -- Silicon Carbide High Temperature Electronics - Is This Rocket Science? 102 / C. -M. Zetterling -- Microchip Post-Processing: There is Plenty of Room at the Top 110 / J. Schmitz -- EUV Lithography: Today and Tomorrow 120 / V. Y. Banine -- Manufacturability and Nanoelectronic Performance 133 / M. J. Kelly -- II OPTOELECTRONICS IN THE NANO AGE 139 -- Ultrafast Nanophotonic Devices For Optical Interconnects 142 / N. N. Ledentsov, V. A. Shchukin and J. A. Lott -- Will Optical Communications Meet the Challenges of the Future? 160 / D. K. Mynbaev -- Optical Antennae for Optoelectronics: Impacts, Promises, and Limitations 173 / H. Mohseni -- Spin Modulation: Teaching Lasers New Tricks 183 / J. Lee, G. Bo�eris, R. Oszwaldowski, K. V�yborn�y, C. G�thgen and I ?utić -- Silicon Photovoltaics: Accelerating to Grid Parity 194 / M. R. Pinto -- Two- and Three-Dimensional Numerical Simulation of Advanced Silicon Solar Cells 210 / E. Sangiorgi, M. Zanuccoli, R. De Rose, P. Magnone and C. Fiegna -- Mechanical Energy harvesting with Piezoelectric Nanostructures: Great Expectations for Autonomous Systems 230 / G. Ardila, R. Hinchet, L. Mont�es and M. Mouis. | |
| 505 | 8 | _aCharged Quantum Dots for Photovoltaic Conversion and IR Sensing 244 / A. Sergeev, V. Mitin, N. Vagidov and K. Sablon -- Active Optomecjanical Resonators 254 / D. Princepe, L. Barea, G. O. Luiz, G. Wiederhecker and N. C. Frateschi -- IV PHYSICS FRONTIERS 263 -- State of the Art and Prospects for Quantum Computing 266 / M. I. Dyakonov -- Wireless, Implantable Neuroprosthesis: Applying Advanced Technology to Untether the Mind 286 / D. A. Borton and A. V. Nurmikko -- Correlated Electrons: A Platform for Solid State Devices 300 / S. D. Ha, Y. Zhou, R. Jaramillo and S. Ramanathan -- Graphene-Based Integrated Electronic, Photonic and Spintronic Circuit 308 / A. D. GŠu�clŠu, P. Potasz and P. Hawrylak -- Luttinger Liquid Behavior of Long GaAs Quantum Wires 319 / E. Levy, I. Sternfeld, M. Eshkol, M. Karpovski, A. Palevski, B. Dwir, A. Rudra, E. Kapon and Y. Oreg -- Toward Spin Electronic Devices Based on Semiconductor Nanowires 328 / S. Heedt, I. Wehrmann, K. Weis, H. Hardtdegen, D. GrŠutzmacher, Th. Sch�apers, C. Morgan, D. E. BŠurgler and R. Calarco -- An Alternative Path for the Fabrication of Self-Assembled III-Nitride Nanowires 340 / A. Haab, M. Mikulics, T. Stoica, B. Kardynal, A. Winden, H. Hardtdegen, D. GrŠutzmacher and E. Sutter -- InAs Nanowires with Surface States as Building Blocks for Tube-Like Electrical Sensing Transitors 351 / N. V. Demarina, M. I. Lepsa and D. GrŠutzmacher -- L�evy Flight of Photoexcited Minority Carriers in Moderately Doped Semiconductors: Theory and Observation 359 / A. Subashiev and S. Luryi -- Terahertz Plasma Oscillations in Field Effect transistors: Main Ideas and Experimental Facts 373 / W. Knap and M. I. Dyakonov -- INDEX 395. | |
| 506 | 1 | _aRestricted to subscribers or individual electronic text purchasers. | |
| 530 | _aAlso available in print. | ||
| 538 | _aMode of access: World Wide Web | ||
| 588 | _aDescription based on PDF viewed 12/22/2015. | ||
| 650 | 0 |
_aNanotechnology _vCongresses. |
|
| 650 | 0 |
_aMicroelectronics _vCongresses. |
|
| 655 | 0 | _aElectronic books. | |
| 695 | _aAbsorption | ||
| 695 | _aAcceleration | ||
| 695 | _aAnodes | ||
| 695 | _aApertures | ||
| 695 | _aArrays | ||
| 695 | _aBandwidth | ||
| 695 | _aBoundary conditions | ||
| 695 | _aCMOS integrated circuits | ||
| 695 | _aCMOS technology | ||
| 695 | _aCapacitors | ||
| 695 | _aCathodes | ||
| 695 | _aCavity resonators | ||
| 695 | _aCharge carrier processes | ||
| 695 | _aComputer architecture | ||
| 695 | _aComputers | ||
| 695 | _aConductivity | ||
| 695 | _aCouplings | ||
| 695 | _aCrystals | ||
| 695 | _aDoping | ||
| 695 | _aElectric potential | ||
| 695 | _aElectricity | ||
| 695 | _aElectron mobility | ||
| 695 | _aElectrostatic discharges | ||
| 695 | _aElementary particle vacuum | ||
| 695 | _aEpitaxial growth | ||
| 695 | _aEquations | ||
| 695 | _aError correction | ||
| 695 | _aEtching | ||
| 695 | _aFabrication | ||
| 695 | _aField effect transistors | ||
| 695 | _aFingers | ||
| 695 | _aGallium arsenide | ||
| 695 | _aGallium nitride | ||
| 695 | _aGold | ||
| 695 | _aGraphene | ||
| 695 | _aHeterojunction bipolar transistors | ||
| 695 | _aHistory | ||
| 695 | _aImpedance | ||
| 695 | _aIndexes | ||
| 695 | _aInformation processing | ||
| 695 | _aIntegrated circuits | ||
| 695 | _aInterference | ||
| 695 | _aJunctions | ||
| 695 | _aLattices | ||
| 695 | _aLiquids | ||
| 695 | _aLithography | ||
| 695 | _aLogic gates | ||
| 695 | _aMOSFET | ||
| 695 | _aMagnetic tunneling | ||
| 695 | _aMagnetization | ||
| 695 | _aMagnetoelectronics | ||
| 695 | _aManufacturing | ||
| 695 | _aMarket research | ||
| 695 | _aMechanical energy | ||
| 695 | _aMetallization | ||
| 695 | _aMetals | ||
| 695 | _aMicroelectrodes | ||
| 695 | _aMicroelectronics | ||
| 695 | _aMicroprocessors | ||
| 695 | _aNanoscale devices | ||
| 695 | _aNanostructures | ||
| 695 | _aNanowires | ||
| 695 | _aNeurons | ||
| 695 | _aNeurophysiology | ||
| 695 | _aNoise | ||
| 695 | _aNumerical models | ||
| 695 | _aNumerical simulation | ||
| 695 | _aOptical amplifiers | ||
| 695 | _aOptical coupling | ||
| 695 | _aOptical fiber networks | ||
| 695 | _aOptical fibers | ||
| 695 | _aOptical interconnections | ||
| 695 | _aOptical modulation | ||
| 695 | _aOptical polarization | ||
| 695 | _aOptical pulses | ||
| 695 | _aOptical receivers | ||
| 695 | _aOptical reflection | ||
| 695 | _aOptical refraction | ||
| 695 | _aOptical resonators | ||
| 695 | _aOptical surface waves | ||
| 695 | _aOptical variables control | ||
| 695 | _aOscillators | ||
| 695 | _aPerformance evaluation | ||
| 695 | _aPhotonic band gap | ||
| 695 | _aPhotonics | ||
| 695 | _aPhotovoltaic cells | ||
| 695 | _aPhotovoltaic systems | ||
| 695 | _aPhysics | ||
| 695 | _aPiezoelectric materials | ||
| 695 | _aPlasma temperature | ||
| 695 | _aPlasma waves | ||
| 695 | _aPlasmas | ||
| 695 | _aProbes | ||
| 695 | _aProposals | ||
| 695 | _aQuantization (signal) | ||
| 695 | _aQuantum computing | ||
| 695 | _aQuantum dots | ||
| 695 | _aQuantum mechanics | ||
| 695 | _aRadiative recombination | ||
| 695 | _aRandom access memory | ||
| 695 | _aResistance | ||
| 695 | _aResists | ||
| 695 | _aResonant frequency | ||
| 695 | _aSemiconductor device measurement | ||
| 695 | _aSemiconductor diodes | ||
| 695 | _aSemiconductor process modeling | ||
| 695 | _aSensors | ||
| 695 | _aSilicon | ||
| 695 | _aSilicon carbide | ||
| 695 | _aSingle electron transistors | ||
| 695 | _aSteady-state | ||
| 695 | _aStimulated emission | ||
| 695 | _aStrain | ||
| 695 | _aSurface treatment | ||
| 695 | _aSurface waves | ||
| 695 | _aSwitches | ||
| 695 | _aTechnological innovation | ||
| 695 | _aTemperature dependence | ||
| 695 | _aTemperature sensors | ||
| 695 | _aThermal factors | ||
| 695 | _aThermal stability | ||
| 695 | _aThreshold voltage | ||
| 695 | _aThyristors | ||
| 695 | _aTorque | ||
| 695 | _aTransistors | ||
| 695 | _aTransmitters | ||
| 695 | _aTunneling | ||
| 695 | _aUltrafast optics | ||
| 695 | _aUltraviolet sources | ||
| 695 | _aVenus | ||
| 695 | _aVertical cavity surface emitting lasers | ||
| 695 | _aWires | ||
| 695 | _aWriting | ||
| 695 | _aXenon | ||
| 700 | 1 | _aLuryi, Serge. | |
| 700 | 1 | _aXu, Jimmy. | |
| 700 | 1 |
_aZaslavsky, Alex, _d1963- |
|
| 710 | 2 |
_aIEEE Xplore (Online Service), _edistributor. |
|
| 710 | 2 |
_aWiley, _epublisher. |
|
| 776 | 0 | 8 |
_iPrint version: _z9781118442166 |
| 856 | 4 | 2 |
_3Abstract with links to resource _uhttp://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=6558560 |
| 942 | _cEBK | ||
| 999 |
_c59905 _d59905 |
||