000			04013cam a2200601 i 4500
001			on1125275395
003			OCoLC
005			20220711203546.0
006			m o d
007			cr |||||||||||
008			190618t20202020nju ob 001 0 eng
010			_a 2019025699
040			_aDLC _beng _erda _epn _cDLC _dOCLCO _dEBLCP _dOCLCF _dDG1 _dRECBK _dYDX _dOCLCQ _dN$T
020			_a9781118701850 _q(electronic publication)
020			_a1118701852 _q(electronic publication)
020			_a9781118701867 _q(electronic book _qoBook)
020			_a1118701860 _q(electronic book _qoBook)
020			_a1118701879 _q(adobe electronic book)
020			_a9781118701874 _q(electronic bk.)
020			_z9781119966340 _q(hardcover)
029	1		_aAU@ _b000066461411
029	1		_aCHNEW _b001077259
029	1		_aCHVBK _b582552494
035			_a(OCoLC)1125275395
042			_apcc
050	0	4	_aTK7874 _b.G379 2020
082	0	0	_a621.3815 _223
049			_aMAIN
100	1		_aGaul, Stephen J., _d1957- _eauthor. _98787
245	1	0	_aIntegrated circuit design for radiation environments / _cStephen J. Gaul, Nicolaas van Vonno, Steven H. Voldman, Wesley H. Morris.
264		1	_aHoboken, NJ : _bWiley, _c2020.
264		4	_c©2020
300			_a1 online resource
336			_atext _btxt _2rdacontent
337			_acomputer _bn _2rdamedia
338			_aonline resource _bnc _2rdacarrier
504			_aIncludes bibliographical references and index.
520			_a"The authors structure the book so that readers can understand the problem of radiation effects first, then understand the skills of layout design and ciruit design after. Chapter One and Chapter Two introduce semiconductors and radiation environments including space, atmospheric and terrestrial environments. Chapter Three details radiation and semiconductor physics. It discusses elementary particle physics so that readers can see how the areas of semiconductors and fundamental interact. Radioactive decay, field equations and transistors are presented in this section too. Damage mechanisms in semiconductors is covered in Chapter Four, including coverage of radiation damage in silicon devices. This leads on logically to single event effects in the next chapter, covering single event upset (SEU), single event gate rupture (SEGR), single event transient (SET), single event latchup (SEL), and radiation techniques. Chapter Six presents radiation-hard semiconductor process and layout techniques, with information on off-the-shelf process technology, and device specific hardening methods. Helpful SEU semiconductor process solutions for SEU are covered in detail in Chapter Seven. Solutions covered include: wells, p-wells, isolation, triple-well, sub-collectors, deep trench and more. Chapter Eight goes into detail on the area of SEU circuit solutions, while Chapter Nine details latchup semiconductor process solutions. Chapter Ten presents Latchup circuit solutions and concluds with a look at emerging effects in future technologies"-- _cProvided by publisher.
588	0		_aOnline resource; title from digital title page (viewed on February 26, 2020).
650		0	_aIntegrated circuits _xDesign and construction. _97630
650		0	_aSemiconductors _xEffect of radiation on. _98788
650		7	_aTECHNOLOGY & ENGINEERING _xElectronics _xCircuits _xGeneral. _2bisacsh _98789
650		7	_aIntegrated circuits _xDesign and construction. _2fast _0(OCoLC)fst00975545 _97630
650		7	_aSemiconductors _xEffect of radiation on. _2fast _0(OCoLC)fst01112217 _98788
655		4	_aElectronic books. _93294
700	1		_aVonno, Nocolaas van, _eauthor. _98790
700	1		_aVoldman, Steven H., _eauthor. _98791
700	1		_aMorris, Wesley H., _eauthor. _98792
776	0	8	_iPrint version: _aGaul, Stephen J., 1957- _tIntegrated circuit design for radiation environments. _dHoboken : Wiley, 2019 _z9781119966340 _w(DLC) 2019025698
856	4	0	_uhttps://doi.org/10.1002/9781118701867 _zWiley Online Library
942			_cEBK
994			_aC0 _bDG1
999			_c69203 _d69203