000			02925cam a22005898i 4500
001			on1193558820
003			OCoLC
005			20220711203640.0
006			m d u
007			cr |||||||||||
008			200901s2021 nju ob 001 0 eng
010			_a 2020033768
040			_aDLC _beng _erda _cDLC _dOCLCO _dOCLCF _dN$T _dDG1
020			_a9781119562269 _q(electronic bk. : oBook)
020			_a1119562260 _q(electronic bk. : oBook)
020			_a9781119562221 _q(adobe pdf)
020			_a1119562228 _q(adobe pdf)
020			_a9781119562283 _q(electronic bk.)
020			_a1119562287 _q(electronic bk.)
020			_z9781119562238 _q(cloth)
029	1		_aAU@ _b000067928979
035			_a(OCoLC)1193558820
042			_apcc
050	0	0	_aTK7895.M3
082	0	0	_a621.39/763 _223
049			_aMAIN
100	1		_aTang, Denny D., _eauthor. _99609
245	1	0	_aMagnetic memory technology : _bspin-transfer-torque MRAM and beyond / _cDenny D. Tang, Chi-Feng Pai.
263			_a2012
264		1	_aHoboken : _bWiley-IEEE Press, _c[2021]
264		4	_c©2021
300			_a1 online resource
336			_atext _btxt _2rdacontent
337			_acomputer _bn _2rdamedia
338			_aonline resource _bnc _2rdacarrier
504			_aIncludes bibliographical references and index.
520			_a"This book first provides the basics of magnetism that electrical engineering students in the semiconductor curriculum can easily understand. Then, it goes one step forward to discuss electron spin. Following the above background discussion, readers are taught the physics of magnetic tunnel junction device (MTJ), the work horse of MRAM, for memory applications. At the end of this book, the author gives a comparison of emerging non-volatile memories (PCM, ReRAM, FeRAM and MRAM). The author also explores MRAM's unique quality among emerging memories, in that is the only one in which the atoms in the device do not move when switching states. This property makes it the most reliable and low power"-- _cProvided by publisher.
588			_aDescription based on print version record and CIP data provided by publisher; resource not viewed.
650		0	_aMagnetic memory (Computers) _99610
650		0	_aSpintronics. _96964
650		0	_aNonvolatile random-access memory. _99611
650		7	_aMagnetic memory (Computers) _2fast _0(OCoLC)fst01005745 _99610
650		7	_aNonvolatile random-access memory _2fast _0(OCoLC)fst01894791 _99611
650		7	_aSpintronics _2fast _0(OCoLC)fst01129994 _96964
655		4	_aElectronic books. _93294
700	1		_aPai, Chi-Feng, _eauthor. _99612
710	2		_aJohn Wiley & Sons, Ltd., _epublisher. _99613
776	0	8	_iPrint version: _aTang, Denny D.. _tMagnetic memory technology _dHoboken : Wiley-IEEE Press, [2021] _z9781119562238 _w(DLC) 2020033767
856	4	0	_uhttps://doi.org/10.1002/9781119562269 _zWiley Online Library
942			_cEBK
994			_aC0 _bDG1
999			_c69450 _d69450