| 000 | 01776cam a2200469Ii 4500 | ||
|---|---|---|---|
| 001 | on1284933480 | ||
| 003 | OCoLC | ||
| 005 | 20220711203735.0 | ||
| 006 | m o d | ||
| 007 | cr cnu|||unuuu | ||
| 008 | 211109s2022 gw o 001 0 eng d | ||
| 040 |
_aDG1 _beng _erda _epn _cDG1 _dOCLCF _dOCLCO |
||
| 020 |
_a9783527824724 _q(electronic bk. : oBook) |
||
| 020 |
_a3527824723 _q(electronic bk. : oBook) |
||
| 024 | 7 |
_a10.1002/9783527824724 _2doi |
|
| 029 | 1 |
_aAU@ _b000070439795 |
|
| 035 | _a(OCoLC)1284933480 | ||
| 050 | 4 | _aQC611.8.W53 | |
| 082 | 0 | 4 |
_a621.3815/2 _223 |
| 049 | _aMAIN | ||
| 245 | 0 | 0 |
_aWide bandgap semiconductors for power electronics / _cedited by Peter Wellmann, Noboru Ohtani, Roland Rupp. |
| 264 | 1 |
_aWeinheim, Germany : _bWiley-VCH, _c[2022] |
|
| 300 | _a1 online resource (2 volumes) | ||
| 336 |
_atext _btxt _2rdacontent |
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| 337 |
_acomputer _bc _2rdamedia |
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| 338 |
_aonline resource _bcr _2rdacarrier |
||
| 505 | 0 | _aVolume 1. Part 1. Silicon carbide -- Volume 2. Part II. Gallium Nitride (GaN), diamond and Ga2O3. | |
| 500 | _aIncludes index. | ||
| 588 | 0 | _aOnline resource; title from PDF title page (John Wiley, viewed November 9, 2021). | |
| 590 | _bWiley Frontlist Obook All English 2021 | ||
| 650 | 0 |
_aWide gap semiconductors. _96369 |
|
| 650 | 0 |
_aPower electronics. _93614 |
|
| 650 | 7 |
_aPower electronics. _2fast _0(OCoLC)fst01074238 _93614 |
|
| 650 | 7 |
_aWide gap semiconductors. _2fast _0(OCoLC)fst01174923 _96369 |
|
| 655 | 4 |
_aElectronic books. _93294 |
|
| 700 | 1 |
_aWellmann, Peter, _eeditor. _910457 |
|
| 700 | 1 |
_aOhtani, Noboru, _eeditor. _910458 |
|
| 700 | 1 |
_aRupp, R. _q(Roland), _eeditor. _910459 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1002/9783527824724 _zWiley Online Library |
| 942 | _cEBK | ||
| 994 |
_a92 _bDG1 |
||
| 999 |
_c69715 _d69715 |
||