000			03001cam a2200385Ii 4500
001			9781315186153
008			180706t20172017si a ob 001 0 eng d
020			_a9781315186153 _q(e-book : PDF)
020			_a9781351736237 _q(e-book: Mobi)
020			_z9789814774215 _q(hardback)
024	7		_a10.1201/9781315186153 _2doi
035			_a(OCoLC)995222347
040			_aFlBoTFG _cFlBoTFG _erda
050		4	_aTA455.G65 _bG76 2017
082	0	4	_a620.115 _bG884
245	0	0	_aGrowing Graphene on Semiconductors / _cedited by Nunzio Motta, Francesca Iacopi, Camilla Coletti.
250			_aFirst edition.
264		1	_aSingapore : _bPan Stanford Publishing, _c[2017]
264		4	_c©2017
300			_a1 online resource (x, 218 pages)
336			_atext _2rdacontent
337			_acomputer _2rdamedia
338			_aonline resource _2rdacarrier
505	0		_achapter 1 The Significance and Challenges of Direct Growth of Graphene on Semiconductor Surfaces -- chapter 2 Graphene Synthesized on Cubic-SiC(001) in Ultrahigh Vacuum: Atomic and Electronic Structure and Transport Properties -- chapter 3 Graphene Growth via Thermal Decomposition on Cubic SiC(111)/Si(111 -- chapter 4 Diffusion and Kinetics in Epitaxial Graphene Growth on SiC -- chapter 5 Atomic Intercalation at the SiC-Graphene Interface -- chapter 6 Epitaxial Graphene on SiC: 2D Sheets, Selective Growth, and Nanoribbons.
520			_a"Graphene, the wonder material of the 21st century, is expected to play an important role in future nanoelectronic applications, but the only way to achieve this goal is to grow graphene directly on a semiconductor, integrating it in the chain for the production of electronic circuits and devices. This book summarizes the latest achievements in this field, with particular attention to the graphitization of SiC. Through high-temperature annealing in a controlled environment, it is possible to decompose the topmost SiC layers, obtaining quasi-ideal graphene by Si sublimation with record electronic mobilities, while selective growth on patterned structures makes possible the opening of a gap by Quantum confinement.The book starts with a review chapter on the significance and challenges of graphene growth on semiconductors, followed by three chapters dedicated to an up-to-date analysis of the synthesis of graphene in ultrahigh vacuum, and concludes with two chapters discussing possible ways of tailoring the electronic band structure of epitaxial graphene by atomic intercalation and of creating a gap by the growth of templated graphene nanostructures."--Provided by publisher.
650		0	_aGraphene. _96450
650		0	_aGraphitization. _913870
650		0	_aSemiconductors. _93077
700	1		_aColetti, Camilla, _eeditor. _913871
700	1		_aIacopi, Francesca, _eeditor. _913872
700	1		_aMotta, Nunzio, _eeditor. _913873
776	0	8	_iPrint version: _z9789814774215
856	4	0	_uhttps://www.taylorfrancis.com/books/9781315186153 _zClick here to view.
942			_cEBK
999			_c70543 _d70543