000			03680cam a2200553Mi 4500
001			9781466560611
003			FlBoTFG
005			20220711212159.0
006			m o d
007			cr cn|||||||||
008			180220s2017 flua o 000 0 eng d
040			_aOCoLC-P _beng _erda _cOCoLC-P
020			_a9781315216195 _q(e-book)
020			_a1315216191
020			_a9781466560611 _q(e-book ; _qPDF)
020			_a1466560614
020			_a9781351832083
020			_a1351832085
035			_a(OCoLC)1023828025 _z(OCoLC)1000454641 _z(OCoLC)1027136707 _z(OCoLC)1028191206
035			_a(OCoLC-P)1023828025
050		4	_aTK7895.M4
072		7	_aTEC008000 _2bisacsh
072		7	_aTEC008010 _2bisacsh
072		7	_aTEC027000 _2bisacsh
082	1	4	_a[E]
082	0	4	_a[E]
082	0	4	_aWB999
082	0	4	_aSCEC1305
082	0	4	_aSCEC133510
082	0	4	_aSCEC36
100	1		_aKurinec, Santosh K., _eeditor. _97867
245	1	0	_aNanoscale Semiconductor Memories : _bTechnology and Applications / _ceditors, Iniewski, Krzysztof.
250			_aFirst edition.
264		1	_aBoca Raton, FL : _bCRC Press, _c2017.
300			_a1 online resource : _btext file, PDF.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
490	0		_aDevices, Circuits, and Systems
520	2		_a"Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems."--Provided by publisher.
588			_aOCLC-licensed vendor bibliographic record.
650		0	_aSemiconductor storage devices. _913974
650		0	_aNanoelectronics. _94822
700	1		_aIniewski, Krzysztof, _eeditor. _913975
856	4	0	_3Taylor & Francis _uhttps://www.taylorfrancis.com/books/9781466560611 _qapplication/PDF _zDistributed by publisher. Purchase or institutional license may be required for access.
856	4	0	_3Taylor & Francis _uhttps://www.taylorfrancis.com/books/9781315216195
856	4	2	_3OCLC metadata license agreement _uhttp://www.oclc.org/content/dam/oclc/forms/terms/vbrl-201703.pdf
942			_cEBK
999			_c70571 _d70571