000			02196cam a2200361Ii 4500
001			9781315269085
008			180706t20182018flua ob 001 0 eng d
020			_a9781315269085 _q(e-book : PDF)
020			_a9781351977968 _q(e-book: Mobi)
020			_z9781138035195 _q(hardback)
024	7		_a10.1201/b21986 _2doi
035			_a(OCoLC)1020572434
040			_aFlBoTFG _cFlBoTFG _erda
050		4	_aTK7871.85 _b.M27 2018
082	0	4	_a660.2977 _bM128
100	1		_aMcCluskey, Matthew D., _eauthor. _914102
245	1	0	_aDopants and defects in semiconductors / _cMatthew D. McCluskey, Washington State University, Pullman, Washington, USA, Eugene E. Haller, UC Berkeley and Lawrence Berkeley National Laboratory, Berkeley, California, USA.
250			_aSecond edition.
264		1	_aBoca Raton, Fla. : _bCRC Press, Taylor & Francis Group, _c[2018]
264		4	_c©2018
300			_a1 online resource (xxii, 350 pages)
336			_atext _2rdacontent
337			_acomputer _2rdamedia
338			_aonline resource _2rdacarrier
505	0		_aSemiconductor basics -- Defect classifications -- Interfaces and devices -- Crystal growth and doping -- Electronic properties -- Vibrational properties -- Optical properties -- Thermal properties -- Electrical measurements -- Optical spectroscopy -- Particle-beam methods -- Microscopy and structural characterization.
520			_a"This revised edition continues to provide the most complete coverage of the fundamental knowledge of semiconductors, expanding on the latest technology and applications of semiconductors with a new chapter. In addition to inclusion of new chapter problems and worked examples, it delves into solid-state lighting (LEDs and laser diodes). It treats dopants and defects as a unified subject, offering a solid foundation for experimental methods and the theory of defects in semiconductors"-- _cProvided by publisher.
650		0	_aSemiconductor doping. _914103
650		0	_aSemiconductors _xDefects. _910752
700	1		_aHaller, Eugene E., _eauthor. _914104
776	0	8	_iPrint version: _z9781138035195
856	4	0	_uhttps://www.taylorfrancis.com/books/9781315269085 _zClick here to view.
942			_cEBK
999			_c70615 _d70615