| 000 | 01942cam a2200385Ii 4500 | ||
|---|---|---|---|
| 001 | 9781315372440 | ||
| 008 | 180331t20172017fluad ob 001 0 eng d | ||
| 020 |
_a9781315372440 _q(e-book : PDF) |
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| 020 |
_a9781482254365 _q(e-book: PDF) |
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| 020 |
_a9781315336114 _q(e-book: Mobi) |
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| 020 |
_z9781482254358 _q(hardback) |
||
| 024 | 7 |
_a10.1201/9781315372440 _2doi |
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| 035 | _a(OCoLC)966405310 | ||
| 040 |
_aFlBoTFG _cFlBoTFG _erda |
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| 050 | 4 |
_aQC611.8.C64 _bA94 2017 |
|
| 082 | 0 | 4 |
_a537.6226 _bA977 |
| 100 | 1 |
_aAyers, John E., _eauthor. _914353 |
|
| 245 | 1 | 0 |
_aHeteroepitaxy of semiconductors : _btheory, growth, and characterization / _cJohn E. Ayers, University of Connecticut, Storrs, USA, Tedi Kujofsa, University of Connecticut, Storrs, USA, Paul Rango, University of Connecticut, Storrs, USA, Johanna E |
| 250 | _aSecond edition. | ||
| 264 | 1 |
_aBoca Raton : _bTaylor & Francis Group, _c[2017] |
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| 264 | 4 | _c©2017 | |
| 300 | _a1 online resource | ||
| 336 |
_atext _2rdacontent |
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| 337 |
_acomputer _2rdamedia |
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| 338 |
_aonline resource _2rdacarrier |
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| 505 | 0 | _a1. Introduction -- 2. Properties of semiconductors -- 3. Heteroepitaxial growth -- 4. Surface and chemical considerations in heteroepitaxy -- 5. Mismatched heteroepitaxial growth and strain relaxation : I. Uniform layers -- 6. Mismatched heteroepitaxial growth and strain relaxation : II. Graded layers and multilayered structures -- 7. Characterization of heteroepitaxial layers -- 8. Defect engineering in heteroepitaxial material -- 9. Metamorphic devices. | |
| 650 | 0 |
_aCompound semiconductors. _914354 |
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| 650 | 0 |
_aEpitaxy. _98017 |
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| 700 | 1 |
_aKujofsa, Tedi, _eauthor. _914355 |
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| 700 | 1 |
_aRango, Paul, _eauthor. _914356 |
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| 700 | 1 |
_aRaphael, Johanna E., _eauthor. _914357 |
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| 776 | 0 | 8 |
_iPrint version: _z9781482254358 _w(DLC) 2016013249 |
| 856 | 4 | 0 |
_uhttps://www.taylorfrancis.com/books/9781482254365 _zClick here to view. |
| 942 | _cEBK | ||
| 999 |
_c70685 _d70685 |
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