000 | 01402cam a2200385Ma 4500 | ||
---|---|---|---|
001 | 9780429145520 | ||
003 | FlBoTFG | ||
005 | 20220711212327.0 | ||
006 | m o d | ||
007 | cr mnummmmuuuu | ||
008 | 090105s2007 flua ob 001 0 eng d | ||
040 |
_aOCoLC-P _beng _epn _cOCoLC-P |
||
020 | _a9780750309936 | ||
020 | _a0750309938 | ||
035 | _a(OCoLC)652434251 | ||
035 | _a(OCoLC-P)652434251 | ||
050 | 4 | _aTK7871.95 | |
082 | 0 | 4 |
_a621.3815/284 _222 |
100 | 1 |
_aMaiti, C. K. _915500 |
|
245 | 1 | 0 |
_aStrained-Si heterostructure field effect devices / _cC.K. Maiti, S. Chattopadhyay, L.K. Bera. |
260 |
_aBoca Raton : _bCRC Press, _c©2007. |
||
300 |
_a1 online resource (423 pages) : _billustrations. |
||
336 |
_atext _btxt _2rdacontent |
||
337 |
_acomputer _bc _2rdamedia |
||
338 |
_aonline resource _bcr _2rdacarrier |
||
490 | 1 | _aSeries in materials science and engineering | |
588 | _aOCLC-licensed vendor bibliographic record. | ||
650 | 0 |
_aMetal oxide semiconductor field-effect transistors. _915501 |
|
650 | 0 |
_aSilicon _xElectric properties. _95172 |
|
700 | 1 |
_aChattopadhyay, Swapan, _d1952- _915502 |
|
700 | 1 |
_aBera, L. K. _915503 |
|
856 | 4 | 0 |
_3Taylor & Francis _uhttps://www.taylorfrancis.com/books/9780429145520 |
856 | 4 | 2 |
_3OCLC metadata license agreement _uhttp://www.oclc.org/content/dam/oclc/forms/terms/vbrl-201703.pdf |
942 | _cEBK | ||
999 |
_c71001 _d71001 |